Fabrication of hexagonal GaN on the surface of β-Ga2O 3 single crystal by nitridation with NH3

Thin Solid Films

Volumn 496, Issue 1, 2006, Pages 53-57

  Ohira, Shigeo ^a,c   Yoshioka, Masayuki ^b   Sugawara, Takamasa ^c   Nakajima, Kazuo ^c   Shishido, Toetsu ^c  

^a Nippon Light Metal Company Ltd   (Japan)

^b Shizuoka Industrial Research Institute of Shizuoka Prefecture   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Ga2O3; Ammonia; Floating zone method; Nitrides

Indexed keywords

AMMONIA; APPROXIMATION THEORY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; NITRIDES; SINGLE CRYSTALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

Β-GA2O3; ELLIPSOIDAL MIRRORS; FLOATING ZONE METHOD; IN-PLANE ORIENTATION;

GALLIUM NITRIDE;

EID: 28044445137     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.230     Document Type: Conference Paper

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