Synthesis and optical properties of sword-like GaN nanorods clusters

Current Applied Physics

Volumn 9, Issue 1 SUPPL., 2009, Pages

  Uthirakumar, Periyayya ^a   Han, Nam ^a   Woo, Seung Hee ^a   Suh, Eun Kyung ^a   Hong, Chang Hee ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Ammoniating process; GaN nanorods; Nitrides; Semiconducting III V materials; Silicon

Indexed keywords

AMMONIA; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSCOPIC EXAMINATION; NANORODS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; ZINC SULFIDE;

AMMONIA GASSES; AMMONIATING PROCESS; ATOMIC NITROGENS; AVERAGE DIAMETERS; CHARACTERISTIC PEAKS; DECOMPOSITION RATES; FOREIGN MATERIALS; GALLATE; GAN NANORODS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM; METAL CONTAMINATIONS; MOLECULAR COMPLEXES; NANO MATERIALS; NANORODS GROWN; RAMAN SPECTRUMS; SEMICONDUCTING III-V MATERIALS; SIMPLE METHODS; SOURCE MATERIALS; WURTZITE STRUCTURES; X-RAY DIFFRACTIONS;

GALLIUM ALLOYS;

EID: 55649113537     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.08.032     Document Type: Article

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