SCOPUS 정보 검색 플랫폼

Volumn 350, Issue 1, 2012, Pages 56-59

Vapor-phase epitaxial growth of GaN films using Ga 2O vapor and NH 3

(8) Imade, Mamoru a Bu, Yuan a Sumi, Tomoaki a Kitamoto, Akira a Yoshimura, Masashi a Sasaki, Takatomo a Imsemura, Masashi b Mori, Yusuke a

a OSAKA UNIVERSITY (Japan)

b Itochu Plastics Inc (Japan)

Author keywords

A2. Growth from vapor; A2. Single crystal growth; A3. Vapor Phase Epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL QUALITIES; CRYSTALLINITIES; GAN EPILAYERS; GROWTH FROM VAPORS; GROWTH OF GAN; HIGH GROWTH RATE; HIGH TEMPERATURE; OXYGEN CONCENTRATIONS; OXYGEN INCORPORATION; SEMI CONDUCTING III-V MATERIALS; VAPOR PHASE;

CRYSTAL GROWTH; DEGRADATION; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH RATE; GROWTH TEMPERATURE; OXYGEN; SURFACE MORPHOLOGY;

VAPORS;

EID: 84861634105 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.12.022 Document Type: Conference Paper

Times cited : (22)

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