GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 31, Issue 5, 2013, Pages

  Hwang, Ya Hsi ^a   Liu, Lu ^a   Velez, Camilo ^a   Ren, Fan ^a   Gila, Brent P ^a   Hays, David ^a   Pearton, Stephen J ^a   Lambers, Eric ^a   Kravchenko, Ivan I ^b   Lo, Chien Fong ^c   Johnson, Jerry W ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; AUGER DEPTH PROFILING; GATE INSULATOR; GATE-LEAKAGE CURRENT; METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS (MISHEMT); PASSIVATION LAYER; SATURATION DRAIN CURRENT; SURFACE OXIDATIONS;

ATOMIC LAYER DEPOSITION; DRAIN CURRENT; GALLIUM NITRIDE; GATE DIELECTRICS; LEAKAGE CURRENTS; MIS DEVICES; PASSIVATION; PHOTOELECTRONS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84884921730     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4816477     Document Type: Article

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