Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

Applied Physics Letters

Volumn 97, Issue 26, 2010, Pages

  Lo, C F ^a   Kang, T S ^a   Liu, L ^a   Chang, C Y ^a   Pearton, S J ^a   Kravchenko, I I ^b   Laboutin, O ^c   Johnson, J W ^c   Ren, F ^a  

^a University of Florida   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c KOPIN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; APPLIED FIELD; BLOCKING VOLTAGE; CONTACT PADS; EXPERIMENTAL DATA; GAP DISTANCES; POOLE-FRENKEL;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS;

ELECTRON MOBILITY;

EID: 78650892694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3533381     Document Type: Article

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