Estimation of trap density in AlGaN/GaN HEMTs from subthreshold slope study

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 111-112

  Chung, J W ^a   Zhao, X ^a   Palacios, T ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249154474     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373674     Document Type: Conference Paper

References (2)

1. D. Kotchetkov et al., "Carrier-Density Fluctuation Noise and the Interface Trap Density in GaN/AlGaN HFETs", Mat. Res. Soc. Symp. Proc. Vol. 680E (2001).
2. E. J. Miller et al., "Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor", J. Appl. Phys., Vol. 87 (2000).