Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 516-518

  Huang, Sen ^a   Jiang, Qimeng ^a   Yang, Shu ^a   Zhou, Chunhua ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); AlN; current collapse; dynamic R ON; passivation; plasma enhanced atomic layer deposition (PEALD)

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ALN; CURRENT COLLAPSE; DYNAMIC-R ON; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION;

ATOMIC LAYER DEPOSITION; ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; PASSIVATION; PLASMA DEPOSITION; THIN FILMS; VAPOR DEPOSITION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862825876     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2185921     Document Type: Article

References (18)

1. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, " The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, " IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.
2. G. Koley, V. Tilak, L. F. Eastman, and M. G. Spencer, " Slow transients observed in AlGaN HFETs: Effects of SiNx passivation and UV illumination, " IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 886-893, Apr. 2003.
3. R. Chu, A. Corrion, M. Chen, R. Li, D. Wong, D. Zehnder, B. Hughes, and K. Boutros, " 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance, " IEEE Electron Device Lett., vol. 32, no. 5, pp. 632-634, May 2011.
4. X. Hu, A. Koudymov, G. Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, and R. Gaska, " Si3N4/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors, " Appl. Phys. Lett., vol. 79, no. 17, pp. 2832-2834, Oct. 2001.
5. 3 dielectric, " Appl. Phys. Lett., vol. 83, no. 14, pp. 2952-2954, Oct. 2003.
6. 3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC, " Electron. Lett., vol. 43, no. 2, pp. 129-130, Jan. 2007.
7. 2 insulation, " Appl. Phys. Lett., vol. 95, no. 4, p. 042 103, Jul. 2009.
8. 3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement, " in Proc. 9th Int. Conf. Nitride Semicond., Glasgow, U. K., 2011.
9. 3/AlGaN interface, " Jpn. J. Appl. Phys., vol. 50, no. 2, p. 021 001, Feb. 2011.
10. K. Mishra, P. Schmidt, S. Laubach, and K. Johnson, " Localization of oxygen donor states in gallium nitride from first-principles calculations, " Phys. Rev. B, vol. 76, no. 3, p. 035 127, Jul. 2007.
11. E. Alekseev, A. Eisenbach, and D. Pavlidis, " Low interface state density AlN/GaN MISFETs, " Electron. Lett., vol. 35, no. 24, pp. 2145-2146, Nov. 1999.
12. Y. Liu, J. A. Bardwell, S. P. McAlister, S. Rolfe, H. Tang, and J. B. Webb, " Surface passivation of AlGaN/GaN HFETs using AlN layer deposited by reactive magnetron sputtering, " Phys. Stat. Sol. (c), no. 1, pp. 69-73, 2003.
13. J. Hwang, W. J. Schaff, B. M. Green, H. Cha, and L. F. Eastman, " Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors, " Solid State Electron., vol. 48, no. 2, pp. 363-366, Feb. 2004.
14. S. L. Selvaraj, T. Ito, Y. Terada, and T. Egawa, " AlN/AlGaN/GaN metal-insulator-semicondutor high-electron-mobility transistor on 4 in. silicon substrate for high breakdown characteristics, " Appl. Phys. Lett., vol. 90, no. 17, p. 173 506, Apr. 2007.
15. N. Tanaka, Y. Sumida, H. Kawai, and T.-K. Suzuki, " Delay time analysis of AlGaN/GaN heterojunction field-effect transistors with AlN or SiN surface passivation, " Jpn. J. Appl. Phys., vol. 48, no. 4, p. 04C099, Apr. 2009.
16. N. Tsurumi, H. Ueno, T. Murata, H. Ishida, Y. Uemoto, T. Ueda, K. Inoue, and T. Tanaka, " AlN passivation over AlGaN/GaN HFETs for surface heat spreading, " IEEE Trans. Electron Devices, vol. 57, no. 5, pp. 980-985, May 2010.
17. K.-H. Kim, N.-W. Kwak, and S. H. Lee, " Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method, " Electron. Mater. Lett., vol. 5, no. 2, pp. 83-86, Jun. 2009.
18. A. P. Edwards, J. A. Mittereder, S. C. Binari, D. S. Katzer, D. F. Storm, and J. A. Roussos, " Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to SiN passivation, " IEEE Electron Device Lett., vol. 26, no. 4, pp. 225-227, Apr. 2005.