100 nm gate AlGaN/GaN HEMTs on silicon with fT = 90GHz

Electronics Letters

Volumn 45, Issue 7, 2009, Pages 376-377

  Sun, H F ^a   Alt, A R ^a   Benedickter, H ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SUBSTRATES;

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CURRENT GAINS; EXTRINSIC TRANSCONDUCTANCES; HIGH-RESISTIVITY SILICON SUBSTRATES; MAXIMUM CURRENT DENSITIES; SILICON SUBSTRATES; SILICON TECHNOLOGIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 63349100423     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.0074     Document Type: Article

References (10)

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