The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

Journal of Crystal Growth

Volumn 335, Issue 1, 2011, Pages 51-57

  Alevli, Mustafa ^a   Ozgit, Cagla ^a   Donmez, Inci ^a   Biyikli, Necmi ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

A1. Crystal structure; A1. Self limited growth; A3. Atomic layer deposition; B1. Aluminum nitride

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. SELF-LIMITED GROWTH; AFM; ALN; ALN FILMS; ALN LAYERS; ATOMIC LAYER; B1. ALUMINUM NITRIDE; FTIR; GRAZING INCIDENCE X-RAY DIFFRACTION; GROWTH MODES; METAL SOURCES; OPTICAL BANDS; OPTICAL PHONON MODES; PHONON MODE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLYCRYSTALLINE; RMS ROUGHNESS; SAPPHIRE SUBSTRATES; SI (100) SUBSTRATE; SOURCE MATERIAL; TRIMETHYLALUMINUM; WURTZITES;

AMMONIA; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL ATOMIC STRUCTURE; FILMS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MATERIALS PROPERTIES; NITRIDES; PHONONS; PLASMA DEPOSITION; PLASMA SOURCES; POLYCRYSTALLINE MATERIALS; REFRACTIVE INDEX; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC SULFIDE;

ALUMINUM NITRIDE;

EID: 80054721143     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.09.003     Document Type: Article

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