Atomic layer deposition of AIN with tris(dimethylamido)aluminum and NH 3

ECS Transactions

Volumn 41, Issue 2, 2011, Pages 219-225

  Liu, G ^a   Deguns, E W ^a   Lecordier, L ^a   Sundaram, G ^a   Becker, J S ^a  

^a Cambridge NanoTech Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AMMONIA; ATOMIC LAYER DEPOSITION; ATOMS; CHEMICAL ANALYSIS; CRYSTALLINITY; III-V SEMICONDUCTORS; LEAKAGE CURRENTS; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY;

CONTINUOUS MODE; GROWTH BEHAVIOR; HIGH BREAKDOWN FIELDS; HIGH DIELECTRIC CONSTANTS; LOW-LEAKAGE CURRENT; MERCURY PROBE; POLYCRYSTALLINE; TEMPERATURE RANGE;

ALUMINUM COATINGS;

EID: 84863134346     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633671     Document Type: Conference Paper

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