SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 6, 2011, Pages

Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors

(11) Liu, L a Ren, F a Pearton, S J a Fitch, R C b Walker, D E b Chabak, K D b Gillespie, J K b Kossler, M b Trejo, M b Via, David b Crespo, A b

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; HOT ELECTRONS; THRESHOLD VOLTAGE;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CRITICAL VOLTAGES; DRAIN BIAS VOLTAGE; DRAIN VOLTAGE; GATE VOLTAGES; HIGHER TEMPERATURES; OFF-STATE STRESS; STEP-STRESS; SUBTHRESHOLD; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TRAP DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84255190061 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3660396 Document Type: Article

Times cited : (13)

References (27)

1
- 0037461927
- 10.1049/el:20030107
- A. P. Zhang, L. B. Rowland, E. B. Kaminsky, J. B. Tucker, J. W. Kretchmer, A. F. Allen, J. Cook and B. J. Edward, Electron. Lett. 39, 245 (2003). 10.1049/el:20030107
- (2003) Electron. Lett. , vol.39 , pp. 245
- Zhang, A.P.¹ Rowland, L.B.² Kaminsky, E.B.³ Tucker, J.B.⁴ Kretchmer, J.W.⁵ Allen, A.F.⁶ Cook, J.⁷ Edward, B.J.⁸

2
- 63349100423
- 10.1049/el.2009.0074
- H. F. Sun, A. R. Alt, H. Benedickter, and C. R. Bolognesi, Electron. Lett. 45, 376 (2009). 10.1049/el.2009.0074
- (2009) Electron. Lett. , vol.45 , pp. 376
- Sun, H.F.¹ Alt, A.R.² Benedickter, H.³ Bolognesi, C.R.⁴

3
- 0035545658
- Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
- DOI 10.1016/S0038-1101(01)00255-6, PII S0038110101002556
- J. W. Johnson, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, F. Ren, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, and P. P. Chow, Solid-State Electron. 45, 1979 (2001). 10.1016/S0038-1101(01)00255-6 (Pubitemid 33024403)
- (2001) Solid-State Electronics , vol.45 , Issue.12 , pp. 1979-1985
- Johnson, J.W.¹ Baca, A.G.² Briggs, R.D.³ Shul, R.J.⁴ Wendt, J.R.⁵ Monier, C.⁶ Ren, F.⁷ Pearton, S.J.⁸ Dabiran, A.M.⁹ Wowchack, A.M.¹⁰ Polley, C.J.¹¹ Chow, P.P.¹²

4
- 68349152993
- 10.1116/1.3139882
- H. Hasegawa and M. Akazawa, J. Vac. Sci. Technol. B 27, 2048 (2009). 10.1116/1.3139882
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 2048
- Hasegawa, H.¹ Akazawa, M.²

5
- 77954317735
- 10.1063/1.3459968
- G. Meneghesso, F. Rossi, G. Salviati, M. J. Uren, E. Muñoz, and E. Zanoni, Appl. Phys. Lett. 96, 263512 (2010). 10.1063/1.3459968
- (2010) Appl. Phys. Lett. , vol.96 , pp. 263512
- Meneghesso, G.¹ Rossi, F.² Salviati, G.³ Uren, M.J.⁴ Muñoz, E.⁵ Zanoni, E.⁶

6
- 0038646155
- 10.1063/1.1579852
- S. Karmalkar, D. M. Sathaiya, and M. S. Shur, Appl. Phys. Lett. 82, 3976 (2003). 10.1063/1.1579852
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3976
- Karmalkar, S.¹ Sathaiya, D.M.² Shur, M.S.³

7
- 31544457357
- On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs
- DOI 10.1109/LED.2005.862672
- S. Karmalkar, N. Satyan, and D. M. Sathaiya, IEEE Electron Device Lett. 27, 87 (2006). 10.1109/LED.2005.862672 (Pubitemid 43159589)
- (2006) IEEE Electron Device Letters , vol.27 , Issue.2 , pp. 87-89
- Karmalkar, S.¹ Satyan, N.² Sathaiya, D.M.³

8
- 68849119728
- 10.1088/0268-1242/24/5/055005
- S. Huang, B. Shen, F. J. Xu, F. Lin, Zh. L. Miao, J. Song, L. Lu, L. B. Cen, L. W. Sang, Z. X. Qin, Z. J. Yang, and G. Y. Zhang, Semicond. Sci. Technol. 24, 055005 (2009). 10.1088/0268-1242/24/5/055005
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 055005
- Huang, S.¹ Shen, B.² Xu, F.J.³ Lin, F.⁴ Miao, Zh.L.⁵ Song, J.⁶ Lu, L.⁷ Cen, L.B.⁸ Sang, L.W.⁹ Qin, Z.X.¹⁰ Yang, Z.J.¹¹ Zhang, G.Y.¹²

9
- 0038325623
- 10.1007/s11664-003-0163-6
- A. P. Zhang, L. B. Rowland, E. B. Kaminsky, V. Tilak, J. C. Grande, J. Teetsov, A. Vertiatchikh, and L. F. Eastman, J. Electron. Mater. 32, 388 (2003). 10.1007/s11664-003-0163-6
- (2003) J. Electron. Mater. , vol.32 , pp. 388
- Zhang, A.P.¹ Rowland, L.B.² Kaminsky, E.B.³ Tilak, V.⁴ Grande, J.C.⁵ Teetsov, J.⁶ Vertiatchikh, A.⁷ Eastman, L.F.⁸

10
- 0038486187
- 10.1016/S0026-2714(03)00066-0
- H. Kim, A. Vertiatchikh, R. M. Thompson, V. Tilak, T. R. Prunty, J. R. Shealy, and L. F. Eastman, Microelectron. Reliab. 43, 823 (2003). 10.1016/S0026-2714(03)00066-0
- (2003) Microelectron. Reliab. , vol.43 , pp. 823
- Kim, H.¹ Vertiatchikh, A.² Thompson, R.M.³ Tilak, V.⁴ Prunty, T.R.⁵ Shealy, J.R.⁶ Eastman, L.F.⁷

11
- 77950061501
- 10.1016/j.physb.2010.02.042
- M. Gassoumi, O. Fathallah, C. Gaquiere, and H. Maaref, Physica B 405, 2337 (2010). 10.1016/j.physb.2010.02.042
- (2010) Physica B , vol.405 , pp. 2337
- Gassoumi, M.¹ Fathallah, O.² Gaquiere, C.³ Maaref, H.⁴

12
- 79751533153
- 10.1016/j.mee.2010.09.027
- M. Gassoumi, M. M. Ben Salem, S. Saadaoui, B. Grimbert, J. Fontaine, C. Gaquiere, and H. Maaref, Microelectron. Eng. 88, 370 (2011). 10.1016/j.mee.2010.09.027
- (2011) Microelectron. Eng. , vol.88 , pp. 370
- Gassoumi, M.¹ Ben Salem, M.M.² Saadaoui, S.³ Grimbert, B.⁴ Fontaine, J.⁵ Gaquiere, C.⁶ Maaref, H.⁷

13
- 0037773324
- 10.1063/1.1582373
- O. Mitrofanov, M. Manfra, and N. Weimann, Appl. Phys. Lett. 82, 4361 (2003). 10.1063/1.1582373
- (2003) Appl. Phys. Lett. , vol.82 , pp. 4361
- Mitrofanov, O.¹ Manfra, M.² Weimann, N.³

14
- 79956026601
- Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
- DOI 10.1063/1.1473701
- W. S. Tan, P. A. Houston, P. J. Parbrook, D. A. Wood, G. Hill, and C. R. Whitehouse, Appl. Phys. Lett. 80, 3207 (2002). 10.1063/1.1473701 (Pubitemid 34562606)
- (2002) Applied Physics Letters , vol.80 , Issue.17 , pp. 3207
- Tan, W.S.¹ Houston, P.A.² Parbrook, P.J.³ Wood, D.A.⁴ Hill, G.⁵ Whitehouse, C.R.⁶

15
- 42349092105
- Investigation of trap effects in AlGaNGaN field-effect transistors by temperature dependent threshold voltage analysis
- DOI 10.1063/1.2911727
- P. Kordoîs, D. Donoval, M. Floroviîc, J. Kováîc, and D. Greguîsová, Appl. Phys. Lett. 92, 152113 (2008). 10.1063/1.2911727 (Pubitemid 351555711)
- (2008) Applied Physics Letters , vol.92 , Issue.15 , pp. 152113
- Kordos, P.¹ Donoval, D.² Florovic, M.³ Kovac, J.⁴ Gregusova, D.⁵

16
- 77954292432
- 10.1002/sia.3462
- L. Semra, A. Telia, and A. Soltanib, Surf. Interface Anal. 42, 799 (2010). 10.1002/sia.3462
- (2010) Surf. Interface Anal. , vol.42 , pp. 799
- Semra, L.¹ Telia, A.² Soltanib, A.³

17
- 0344496733
- 10.1063/1.1623009
- D. C. Look, G. C. Farlow, P. J. Drevinsky, D. F. Bliss, and J. R. Sizelove, Appl. Phys. Lett. 83, 3525 (2003). 10.1063/1.1623009
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3525
- Look, D.C.¹ Farlow, G.C.² Drevinsky, P.J.³ Bliss, D.F.⁴ Sizelove, J.R.⁵

18
- 0141792945
- 10.1116/1.1589520
- H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, J. Vac. Sci. Technol. B 21, 1844 (2003). 10.1116/1.1589520
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 1844
- Hasegawa, H.¹ Inagaki, T.² Ootomo, S.³ Hashizume, T.⁴

19
- 67651221803
- 10.1016/j.mejo.2007.02.005
- M. Gassoumi, J. M. Bluet, C. Gaquiere, G. Guillot, and H. Maaref, Microelectron. J. 40, 1161 (2009). 10.1016/j.mejo.2007.02.005
- (2009) Microelectron. J. , vol.40 , pp. 1161
- Gassoumi, M.¹ Bluet, J.M.² Gaquiere, C.³ Guillot, G.⁴ Maaref, H.⁵

20
- 72049128303
- 10.1016/j.sse.2009.08.006
- S. Y. Xie, J. Y. Yin, S. Zhang, B. Liu, W. Zhou, and Z. H. Feng, Solid-State Electron. 53, 1183 (2009). 10.1016/j.sse.2009.08.006
- (2009) Solid-State Electron. , vol.53 , pp. 1183
- Xie, S.Y.¹ Yin, J.Y.² Zhang, S.³ Liu, B.⁴ Zhou, W.⁵ Feng, Z.H.⁶

21
- 59349114272
- 10.1166/jno.2006.212
- W. L. Liu, Y. L. Chen, A. A. Balandin, and K. L. Wang, J. Nanoelectron. Optoelectron 1, 258 (2006). 10.1166/jno.2006.212
- (2006) J. Nanoelectron. Optoelectron , vol.1 , pp. 258
- Liu, W.L.¹ Chen, Y.L.² Balandin, A.A.³ Wang, K.L.⁴

22
- 52949085057
- 10.1063/1.2990627
- R. Stoklas, D. Greguîsová, J. Novák, A. Vescan, and P. Kordoîs, Appl. Phys. Lett. 93, 124103 (2008). 10.1063/1.2990627
- (2008) Appl. Phys. Lett. , vol.93 , pp. 124103
- Stoklas, R.¹ Greguîsová, D.² Novák, J.³ Vescan, A.⁴ Kordoîs, P.⁵

23
- 47249152802
- 10.1109/LED.2008.2000919
- J. Joh and J. A. del Alamo, IEEE Electron Device Lett. 29, 287 (2008). 10.1109/LED.2008.2000919
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 287
- Joh, J.¹ Del Alamo, J.A.²

24
- 79958175626
- 10.1116/1.3581078
- L. Liu, T. S. Kang, D. A. Cullen, L. Zhou, J. Kim, C. Y. Chang, E. A. Douglas, S. Jang, D. J. Smith, S. J. Pearton, W. J. Johnson, and F. Ren, J. Vac. Sci. Technol. B 29, 032204-1 (2011). 10.1116/1.3581078
- (2011) J. Vac. Sci. Technol. B , vol.29 , pp. 032204-032201
- Liu, L.¹ Kang, T.S.² Cullen, D.A.³ Zhou, L.⁴ Kim, J.⁵ Chang, C.Y.⁶ Douglas, E.A.⁷ Jang, S.⁸ Smith, D.J.⁹ Pearton, S.J.¹⁰ Johnson, W.J.¹¹ Ren, F.¹²

25
- 77957744527
- 10.1116/1.3491038
- C. Y. Chang, T. Anderson, J. Hite, L. Liu, C. F. Lo, B. H. Chu., D. J. Cheney, E. A. Douglas, B. P. Gila, F. Ren, G. D. Via, Patrick Whiting, R. Holzworth, K. S. Jones, S. Jang, and S. J. Pearton, J. Vac. Sci. Technol. B 28, 1044 (2010). 10.1116/1.3491038
- (2010) J. Vac. Sci. Technol. B , vol.28 , pp. 1044
- Chang, C.Y.¹ Anderson, T.² Hite, J.³ Liu, L.⁴ Lo, C.F.⁵ Chu, B.H.⁶ Cheney, D.J.⁷ Douglas, E.A.⁸ Gila, B.P.⁹ Ren, F.¹⁰ Via, G.D.¹¹ Whiting, P.¹² Holzworth, R.¹³ Jones, K.S.¹⁴ Jang, S.¹⁵ Pearton, S.J.¹⁶

26
- 55149106333
- 10.1109/LED.2008.2005257
- J. W. Chung, J. C. Roberts, E. L. Piner, and T. Palacios, IEEE Electron Device Lett. 29, 1196 (2008). 10.1109/LED.2008.2005257
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 1196
- Chung, J.W.¹ Roberts, J.C.² Piner, E.L.³ Palacios, T.⁴

27
- 47249154474
- Notre Dame, IN, 10.1109/DRC.2007.4373674
- J. W. Chung, X. Zhao, and T. Palacios, Proceedings of the 65th Device Res. Conference, Notre Dame, IN, June 2007, pp. 111-112. 10.1109/DRC.2007. 4373674
- (2007) Proceedings of the 65th Device Res. Conference , pp. 111-112
- Chung, J.W.¹ Zhao, X.² Palacios, T.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.