Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using La2O3 gate dielectric

Science China Technological Sciences

Volumn 56, Issue 3, 2013, Pages 629-632

  Feng, Qian ^a   Wang, Qiang ^a   Xing, Tao ^a   Li, Qian ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

gallium nitride metal insulator semiconductor high electron mobility transistor (MISHEMT); lanthanum oxide

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; GATE DIELECTRICS; III-V SEMICONDUCTORS; LANTHANUM OXIDES; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; REACTIVE SPUTTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

ELECTRICAL CHARACTERISTIC; GATE VOLTAGE SWING; GATE-LEAKAGE CURRENT; MAXIMUM DRAIN CURRENT; MAXIMUM TRANSCONDUCTANCE; METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS (MISHEMT); ORDERS OF MAGNITUDE; SURFACE PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84878388879     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-012-5127-8     Document Type: Article

References (13)

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