Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

Applied Physics Letters

Volumn 97, Issue 5, 2010, Pages

  Tan, S ^a   Selvaraj, S L ^a   Egawa, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ALN; ALN LAYERS; BAND DIAGRAMS; CAP LAYERS; CURRENT COLLAPSE; DEVICE PERFORMANCE; GATE INSULATOR; GATE LEAKAGES; IN-SITU; LOW TEMPERATURES; LOW-TEMPERATURE GROWN; MAXIMUM DRAIN CURRENT; METALORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION LAYER; POTENTIAL DIFFERENCE; SHEET CARRIER DENSITIES; SILICON SUBSTRATES; SURFACE BARRIER; TRAPPING EFFECTS;

CARRIER MOBILITY; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PASSIVATION; SUBSTRATES;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77955755157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3475394     Document Type: Article

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