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Volumn 28, Issue 2, 2013, Pages

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; DRAIN LEAKAGE CURRENT; GATE INSULATOR; GATE-LEAKAGE CURRENT; HIGH BREAKDOWN VOLTAGE; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; ON/OFF CURRENT RATIO; PASSIVATION EFFECT; SI SUBSTRATES; SURFACE LEAKAGE CURRENTS;

EID: 84872898204     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/2/025001     Document Type: Article
Times cited : (36)

References (29)
  • 2
    • 0001590229 scopus 로고    scopus 로고
    • 10.1063/1.369664 0021-8979
    • Ambacher O et al 1999 J. Appl. Phys. 85 3222
    • (1999) J. Appl. Phys. , vol.85 , Issue.6 , pp. 3222
    • Ambacher, O.1
  • 19
    • 0000220552 scopus 로고    scopus 로고
    • Trapping effects in GaN and SiC microwave FETs
    • DOI 10.1109/JPROC.2002.1021569, PII S0018921902055809
    • Binari S C, Klein P B and Kazior T E 2002 Proc. IEEE 90 1048 (Pubitemid 43785872)
    • (2002) Proceedings of the IEEE , vol.90 , Issue.6 , pp. 1048-1058
    • Binari, S.C.1    Klein, P.B.2    Kazior, T.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.