AlGaN/GaN heterostructure metal-insulator-semiconductor high-electron-mobility transistors with Si3N4 gate insulator

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2278-2280

  Ochiai, Masaru ^a   Akita, Mitsutoshi ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Maezawa, Kouichi ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

AlGaN GaN HEMT; Current collapse; Gate leakage current; Low frequency noise; MIS HEMTs; Si3N4 gate insulator

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; GATE INSULATOR; GATE LEAKAGE CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038347876     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2278     Document Type: Article

References (11)

1. Y. F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller and U. K. Mishra: IEEE Trans. Electron Devices 48 (2001) 586.
2. L. F. Eastman, V. T. J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff and J. R. Shealy: IEEE Trans. Electron Devices 48 (2001) 479.
3. X. Hu, A. Koudymov, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur and R. Gaska: Appl. Phys. 79 (2001) 2832.
4. S. Mizuno, Y. Ohno, S. Kishimoto, K. Maezawa and T. Mizutani: Jpn. J. Appl. Phys. 41 (2002) 5125.
5. R. Ventury, N. Q. Zhang, S. Keller and U. K. Mishra: IEEE Trans. Electron Devices 48 (2001) 560.
6. A. Tarakji, G. Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koubymov, J. Yang and M. A. Khan: Appl. Phys. 78 (2001) 2169.
7. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto and K. Maezawa: Phys. Status Solidi 194 (2002) 447.
8. M. A. Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska and M. S. Shur: IEEE Electron Devices Lett. 21 (2000) 63.
9. H. Masato, Y. Ikeda, T. Matsuno, K. Inoue and N. Nishii: Int. Electron Device Meet. Tech. Dig. (2000) p. 377.
10. M. Akita, K. Kishimoto and T. Mizutani: Phys. Status Solidi 188 (2001) 207.
11. H. Makihara, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa and T. Mizutani: Int. Symp. Compound Semiconductor Abstr. (2001) p. 52.