Fabrication and Characterization of Enhancement-Mode High-κ LaLuO3-AlGaN/GaN MIS-HEMTs

IEEE Transactions on Electron Devices

Volumn 60, Issue 10, 2013, Pages 3040-3046

  Yang, Shu ^a   Huang, Sen ^a,b   Schnee, Michael ^c   Zhao, Qing Tai ^c   Schubert, Jurgen ^c   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF MICROELECTRONICS   (China)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

AlGaN GaN metal insulator semiconductor high electron mobility transistors (MIS HEMTs); enhancementmode (E mode); fluorine (F) plasma ion implantation; high J ; Index Terms; LaLuO3 (LLO).

Indexed keywords

ALUMINUM GALLIUM NITRIDE; BOND STRENGTH (CHEMICAL); CHEMICAL ANALYSIS; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; FABRICATION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; ION IMPLANTATION; IONS; LANTHANUM COMPOUNDS; LUTETIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; MIS DEVICES; REFRACTORY METAL COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; SWITCHING CIRCUITS; THRESHOLD VOLTAGE; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ENHANCEMENT MODE (E MODE); HIGH-{J; INDEX TERMS; LALUO3 (LLO); METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS (MISHEMT); PLASMA ION IMPLANTATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84884803326     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2277559     Document Type: Article

References (33)

1. U. K. Mishra, L. Shen, T. E. Kazior, and Y. F. Wu, "GaN-based RF power devices and amplifiers," Proc. IEEE, vol. 96, no. 2, pp. 287-305, Feb. 2008.
2. M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, "GaN power switching devices," in Proc. IPEC, Jun. 2010, pp. 1014-1017.
3. N. Ikeda, Y. Niiyama, H. Kambayashi, Y. Sato, T. Nomura, S. Kato, and S. Yoshida, "GaN power transistors on Si substrates for switching applications," Proc. IEEE, vol. 98, no. 7, pp. 1151-1161, Jul. 2010.
4. P. D. Ye, B. Yang, K. Ng, J. Bude, G. Wilk, S. Halder, and J. Hwang, "GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric," Appl. Phys. Lett., vol. 86, no. 6, pp. 063501-1-063501-3, Feb. 2005.
5. C. Liu, E. F. Chor, and L. S. Tan, "Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide," Semicond. Sci. Technol., vol. 22, no. 5, p. 522, 2007.
6. H. C. Chiu, C. W. Lin, C. H. Chen, C. W. Yang, C. K. Lin, J. S. Fu, L. B. Chang, R. M. Lin, and K. P. Hsueh, "Low hysteresis dispersion La2O3 AlGaN/GaN MOS-HEMTs," J. Electrochem. Soc., vol. 157, no. 2, pp. H160-H164, 2010.
7. S. Ohmi, M. Takeda, H. Ishiwara, and H. Iwai, "Electrical characteristics for Lu2O3 thin films fabricated by e-beam deposition method," J. Electrochem. Soc., vol. 151, no. 4, pp. G279-G283, 2004.
8. J. Schubert, O. Trithaveesak, W. Zander, M. Roeckerath, T. Heeg, H. Y. Chen, C. L. Jia, P. Meuffels, Y. Jia, and D. G. Schlom, "Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition," Appl. Phys. A, Mater. Sci. Process., vol. 90, no. 3, pp. 577-579, Mar. 2008.
9. M. Roeckerath, T. Heeg, J. M. J. Lopes, J. Schubert, S. Mantl, A. Besmehn, P. Myllymaki, and L. Niinisto, "Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric," Thin Solid Films, vol. 517, no. 1, pp. 201-203, Nov. 2008.
10. S. Yang, S. Huang, H. Chen, M. Schnee, Q.-T. Zhao, J. Schubert, and K. J. Chen, "Characterization of high-? LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition," Appl. Phys. Lett., vol. 99, no. 18, pp. 182103-1-182103-3, Oct. 2011.
11. S. Yang, S. Huang, H. Chen, C. Zhou, Q. Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and K. J. Chen, "AlGaN/GaN MISHEMTs with high-? LaLuO3 gate dielectric," IEEE Electron Device Lett., vol. 33, no. 7, pp. 979-981, Jul. 2012.
12. R. Wang, Y. Cai, C. W. Tang, K. M. Lau, and K. J. Chen, "Enhancementmode Si3N4/AlGaN/GaN MISHFETs," IEEE Electron Device Lett., vol. 27, no. 10, pp. 793-795, Oct. 2006.
13. K. J. Chen and C. Zhou, "Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology," Phys. Status Solidi A, vol. 208, no. 2, pp. 434-438, Feb. 2011.
14. T. Oka and T. Nozawa, "AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications," IEEE Electron Device Lett., vol. 29, no. 7, pp. 668-670, Jul. 2008.
15. J. M. J. Lopes, M. Roeckerath, T. Heeg, J. Schubert, U. Littmark, S. Mantl, and A. Besmehn, "Amorphous lanthanum lutetium oxide thin films as an alternative high-? material," Electrochem. Soc., vol. 11, no. 4, pp. 311-318, Oct. 2007.
16. E. D. Ozben, J. M. J. Lopes, A. Nichau, M. Schnee, S. Lenk, A. Besmehn, K. K. Bourdelle, Q.-T. Zhao, J. Schubert, and S. Mantl, "Integration of LaLuO3 (? ? 030) as high-? dielectric on strained and unstrained SOI MOSFETs with a replacement gate process," IEEE Electron Device Lett., vol. 32, no. 1, pp. 15-17, Jan. 2011.
17. Y. Liu, S. Shen, L. J. Brillson, and R. G. Gordon, "Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metaloxide- semiconductor devices," Appl. Phys. Lett., vol. 98, no. 12, pp. 122907-1-122907-3, Mar. 2011.
18. S. Shen, Y. Liu, R. G. Gordon, and L. J. Brillson, "Impact of ultrathin Al2O3 diffusion barriers on defects in high-? LaLuO3 on Si," Appl. Phys. Lett., vol. 98, no. 17, pp. 172902-1-172902-3, Apr. 2011.
19. Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi, "Suppression of leakage current and moisture absorption of La2O3 films with ultraviolet ozone post treatment," Jpn. J. Appl. Phys., vol. 46, no. 7, pp. 4189-4192, Jul. 2007. (Pubitemid 47245383)
20. C. Chen, X. Liu, B. Tian, P. Shu, Y. Chen, W. Zhang, H. Jiang, and Y. Li, "Fabrication of enhancement-mode AlGaN/GaN MISHEMTs by using fluorinated Al2O3 as gate dielectrics," IEEE Electron Device Lett., vol. 32, no. 10, pp. 1373-1375, Oct. 2011.
21. S. Oswald and S. Baunack, "Comparison of depth profiling techniques using ion sputtering from the practical point of view," Thin Solid Films, vol. 425, nos. 1-2, pp. 9-19, Feb. 2003.
22. H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastman, "The role of dislocation scattering in n-type GaN films," Appl. Phys. Lett., vol. 73, no. 6, pp. 821-823, Aug. 1998. (Pubitemid 128673928)
23. J. Antoszewski, M. Gracey, J. M. Dell, L. Faraone, T. A. Fisher, G. Parish, Y. F. Wu, and U. K. Mishra, "Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors," J. Appl. Phys., vol. 87, no. 8, pp. 3900-3904, Apr. 2000.
24. D. F. Mullica, C. K. C. Lok, H. O. Perkins, and V. Young, "X-ray photoelectron final-state screening in La(OH)3: A multiplet structural analysis," Phy. Rev. B, vol. 31, no. 6, pp. 4039-4042, 1985.
25. S. J. Oh, G. H. Kim, G. A. Sawatzky, and H. T. Jonkman, "Effect of hole-induced shakedown in the Auger spectrum of lanthanum," Phys. Rev. B, vol. 37, no. 11, pp. 6145-6152, Apr. 1988.
26. M. Tada, S. Fujihara, and T. Kimura, "Sol-gel processing and characterization of alkaline earth and rare-earth fluoride thin films," J. Mater. Res., vol. 14, no. 4, pp. 1610-1616, Apr. 1999.
27. S. Huang, S. Yang, J. Roberts, and K. J. Chen, "Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors," Jpn. J. Appl. Phys., vol. 50, no. 11, pp. 110202-1-110202-3, Nov. 2011.
28. P. Lagger, C. Ostermaier, G. Pobegen, and D. Pogany, "Towards understanding the origin of threshold voltage instability of AlGaN/GaN MISHEMTs," in Proc. IEDM, Dec. 2012, pp. 13.1.1-13.1.4.
29. C. Mizue, Y. Hori, M. Miczek, and T. Hashizume, "Capacitance-voltage characteristics of Al2O3/AlGaN/GaN structures and state density distribution at Al2O3/AlGaN interface," Jpn. J. Appl. Phys., vol. 50, no. 2, pp. 021001-1-021001-7, Feb. 2011.
30. S. Huang, Q. Jiang, S. Yang, C. Zhou, and K. J. Chen, "Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film," IEEE Electron Device Lett., vol. 33, no. 4, pp. 516-518, Apr. 2012.
31. H. Ohta, M. Hori, and T. Goto, "Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4," J. Appl. Phys., vol. 90, no. 4, pp. 1955-1961, Aug. 2001. (Pubitemid 33611865)
32. W. S. Tan, M. J. Uren, P. A. Houston, R. T. Green, R. S. Balmer, and T. Martin, "Surface leakage currents in SiNx passivated AlGaN/GaN HFETs," IEEE Electron Device Lett., vol. 27, no. 1, pp. 1-3, Jan. 2006.
33. J. Kotani, M. Tajima, S. Kasai, and T. Hashizume, "Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures," Appl. Phys. Lett., vol. 91, no. 9, pp. 093501-1-093501-3, Aug. 2007.