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Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

(7) Yang, Shu a Huang, Sen a Chen, Hongwei a Schnee, Michael b Zhao, Qing Tai b Schubert, Jrgen b Chen, Kevin J a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; AMORPHOUS TRANSITION; CAPACITANCE-VOLTAGE CHARACTERISTICS; EFFECTIVE DIELECTRIC CONSTANTS; ENERGY-LOSS SPECTRUM; FORWARD BIAS; FORWARD CURRENTS; FREQUENCY DISPERSION; METAL-INSULATOR-SEMICONDUCTOR DIODES; MIS DIODES; MOLECULAR BEAM DEPOSITION; ORDERS OF MAGNITUDE; POLYCRYSTALLINE; SCHOTTKY DIODES;

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; BELT DRIVES; CHEMICAL MODIFICATION; DEPOSITION; DIODES; ENERGY DISSIPATION; GALLIUM NITRIDE; HETEROJUNCTIONS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MOLECULAR BEAMS; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; THIN FILMS; VANADIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

VAPOR DEPOSITION;

EID: 80855141624 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3657521 Document Type: Article

Times cited : (11)

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