Impact of ultrathin Al2 O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

  Liu, Yiqun ^a   Shen, Shaoping ^b   Brillson, Leonard J ^b   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

^b The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL PROPERTY; ENERGY LEVEL; EQUIVALENT OXIDE THICKNESS; INTERFACE STATE DENSITY; INTERFACIAL LAYER; METAL OXIDE SEMICONDUCTOR; OXYGEN TREATMENT; OXYGEN VACANCY LEVEL; POOLE-FRENKEL CONDUCTION; TEMPERATURE DEPENDENT; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; ELECTRON MOBILITY; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; VACANCIES;

OXYGEN VACANCIES;

EID: 79953899273     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3563713     Document Type: Article

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