AlGaN/GaN MISHEMTs with high-κLaLuO 3 gate dielectric

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 979-981

  Yang, Shu ^a   Huang, Sen ^a   Chen, Hongwei ^a   Zhou, Chunhua ^a   Zhou, Qi ^a   Schnee, Michael ^b   Zhao, Qing Tai ^b   Schubert, Jürgen ^b   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

AlGaN GaN metal insulator semiconductor (MIS) high electron mobility transistors (HEMTs) (MISHEMTs); high ; LaLuO 3 (LLO)

Indexed keywords

ALGAN/GAN; LALUO 3 (LLO); MAXIMUM DRAIN CURRENT; METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS (MISHEMT); METAL-INSULATOR-SEMICONDUCTORS; PEAK TRANSCONDUCTANCE; PLANAR PROCESS; SUBTHRESHOLD SLOPE;

GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; MIS DEVICES;

GALLIUM NITRIDE;

EID: 84862853564     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2195291     Document Type: Article

References (19)

1. U. K.Mishra, L. Shen, T. E. Kazior, and Y.Wu, "GaN-based RF power devices and amplifiers," Proc. IEEE, vol. 96, no. 2, pp. 287-305, Feb. 2008.
2. Y. Uemoto, D. Shibata, M. Yanagihara, H. Ishida, H. Matsuo, S. Nagai, N. Batta, M. Li, T. Ueda, T. Tanaka, and D. Ueda, "8300 V blocking voltage AlGaN/GaN power HFET with thick poly-AlN passivation," in IEDM Tech. Dig., Dec. 2007, pp. 861-864.
3. W. Chen, K. Wong, and K. J. Chen, "Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT," IEEE Electron Device Lett., vol. 30, no. 5, pp. 430-432, May 2009.
4. P. D. Ye, B. Yang, K. Ng, J. Bude, G. Wilk, S. Halder, and J. Hwang, "GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric," Appl. Phys. Lett., vol. 86, no. 6, pp. 063501-1-063501-3, Feb. 7, 2005.
5. C. Liu, E. F. Chor, and L. S. Tan, "Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-κ dielectric for surface passivation and gate oxide," Semicond. Sci. Technol., vol. 22, no. 5, pp. 522-527, May 2007. (Pubitemid 46656122)
6. H. C. Chiu, C. W. Lin, C. H. Chen, C. W. Yang, C. K. Lin, J. S. Fu, L. B. Chang, R. M. Lin, and K. P. Hsueh, "Low hysteresis dispersion La2O3 AlGaN/GaN MOS-HEMTs," Electrochem. Soc., vol. 157, no. 2, pp. H160-H64, 2010.
7. S. Ohmi, M. Takeda, H. Ishiwara, and H. Iwai, "Electrical characteristics for Lu2O3 thin films fabricated by E-beam deposition method," J. Electrochem. Soc., vol. 151, no. 4, pp. G279-G283, 2004.
8. D. H. Triyoso, D. C. Gilmer, J. Jiang, and R. Droopad, "Characteristics of thin lanthanum lutetium oxide high-κ dielectrics," Microelectron. Eng., vol. 85, no. 8, pp. 1732-1735, Aug. 2008.
9. J. Schubert, O. Trithaveesak, W. Zander, M. Roeckerath, T. Heeg, H. Y. Chen, C. L. Jia, P. Meuffels, Y. Jia, and D. G. Schlom, "Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition," Appl. Phys. A, Mater. Sci. Process., vol. 90, no. 3, pp. 577-579, Mar. 2008.
10. M. Roeckerath, T. Heeg, J. Lopes, J. Schubert, S Mantl, A. Besmehn, P. Myllymaki, and L. Niinisto, "Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric," Thin Solid Films, vol. 517, no. 1, pp. 201-203, Nov. 3, 2008.
11. S. Yang, S. Huang, H. W. Chen, M. Schnee, Q. T. Zhao, J. Schubert, and K. J. Chen, "Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition," Appl. Phys. Lett., vol. 99, no. 18, pp. 182 103-1-182 103-3, Oct. 2011.
12. J. M. J. Lopes, M. Roeckerath, T. Heeg, J. Schubert, U. Littmark, S. Mantl, and A. Besmehn, "Amorphous lanthanum lutetium oxide thin films as an alternative high-κ material," Electrochem. Soc., vol. 11, no. 4, pp. 311-318, Oct. 2007.
13. E. D. Özben, J. M. J. Lopes, A. Nichau,M. Schnee, S. Lenk, A. Besmehn, K. K. Bourdelle, Q. T. Zhao, J. Schubert, and S. Mantl, "Integration of LaLuO3 (κ ∼ 30) as high-κ dielectric on strained and unstrained SOI MOSFETs with a replacement gate process," IEEE Electron Device Lett., vol. 32, no. 1, pp. 15-17, Jan. 2011.
14. S. Shen, Y. Liu, R. G. Gordon, and L. J. Brillson, "Impact of ultrathin Al2O3 diffusion barriers on defects high-κ LaLuO3 on Si," Appl. Phys. Lett., vol. 98, no. 17, pp. 172 902-1-172 902-3, Apr. 2011.
15. Y. Liu, S. Shen, L. J. Brillson, and R. G. Gordon, "Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxidesemiconductor devices," Appl. Phys. Lett., vol. 98, no. 12, pp. 122 907-1-122 907-3, Mar. 2011.
16. Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi, "Suppression of leakage current and moisture absorption of La2O3 films with ultraviolet ozone post treatment," Jpn. J. Appl. Phys. 1, Regul. Pap. Brief Commun. Rev. Pap., vol. 46, no. 7A, pp. 4189-4192, Jul. 2007. (Pubitemid 47245383)
17. J. J. Gu, Y. Q. Liu,M. Xu, G. K. Celler, R. G. Gordon, and P. D. Ye, "High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer," Appl. Phys. Lett., vol. 97, no. 1, pp. 012106-1-012106-3, Jul. 2010.
18. S. Huang, Q. M. Jiang, S. Yang, C. H. Zhou, and K. J. Chen, "Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film," IEEE Electron Device Lett., vol. 33, no. 4, pp. 516-518, Apr. 2012.
19. R. M. Chu, A. Corrion, M. Chen, R. Li, D.Wong, D. Zehnder, B. Hughes, and K. Boutros, "1200-V normally off GaN-on-Si field-effect transistors with low dynamic ON-resistance," IEEE Electron Device Lett., vol. 32, no. 5, pp. 632-634, May 2011.