GaN power switching devices

2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010

Volumn , Issue , 2010, Pages 1014-1017

  Ishida, Masahiro ^a   Uemoto, Yasuhiro ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

GaN; Gate Injection Transistor; Inverter IC; Power switching transistor

Indexed keywords

ALGAN; CONDUCTIVITY MODULATION; GAN; GATE INJECTION; HIGH BREAKDOWN VOLTAGE; HOLE INJECTION; INVERTER IC; LOW COST FABRICATION; OPERATING LOSS; OPERATING PRINCIPLES; P-TYPE; POWER DEVICES; POWER SWITCHING; POWER SWITCHING DEVICES; POWER SWITCHING TRANSISTOR; PRACTICAL USE; SI SUBSTRATES; SI-BASED; SINGLE CHIPS; STATE-OF-THE-ART DEVICES;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; DRAIN CURRENT; EPITAXIAL GROWTH; GALLIUM NITRIDE; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SWITCHING;

GALLIUM ALLOYS;

EID: 77956527157     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5542030     Document Type: Conference Paper

References (10)

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