Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 2, 2011, Pages 434-438

  Chen, Kevin J ^a   Zhou, Chunhua ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

dry etching; enhancement mode AlGaN GaN HEMT; fluorine plasma ion implantation; smart power chip technology

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HETEROSTRUCTURES; ALTERNATIVE APPROACH; APPLICATION EXAMPLES; DEVICE CHARACTERISTICS; ENHANCEMENT-MODE; FLUORINE PLASMA ION IMPLANTATION; HIGH-FREQUENCY POWER; MIS-HEMT; POWER SWITCHES; SEMICONDUCTOR TECHNOLOGY; SILICON TECHNOLOGIES; SMART POWER;

DRY ETCHING; FLUORINE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH FREQUENCY AMPLIFIERS; ION IMPLANTATION; PLASMA ETCHING; POWER AMPLIFIERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; TECHNOLOGY;

PLASMA APPLICATIONS;

EID: 79751505917     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000631     Document Type: Article

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