Integration of LaLuO3(κ∼30) as high-κ dielectric on strained and unstrained SOI MOSFETs with a replacement gate process

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 15-17

  Durgun Ozben E ^a   Lopes, J M J ^a   Nichau, A ^a   Schnee, M ^a   Lenk, S ^a   Besmehn, A ^a   Bourdelle, K K ^b   Zhao, Q T ^a   Schubert, J ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

High ; LaLuO3; mobility; replacement gate; silicon on insulator (SOI); strained Si

Indexed keywords

LALUO3; MOBILITY; REPLACEMENT GATE; SILICON-ON-INSULATOR (SOI); STRAINED-SI;

ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; LANTHANUM OXIDES; MOSFET DEVICES; SILICON COMPOUNDS; SILICON OXIDES; TITANIUM NITRIDE;

SILICON;

EID: 78650860647     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2089423     Document Type: Conference Paper

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