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Volumn 157, Issue 2, 2010, Pages

Low hysteresis dispersion La2 O3 AlGaN/GaN MOS-HEMTs

(9) Chiu, Hsien Chin a Lin, Chao Wei a Chen, Chao Hung a Yang, Chih Wei a Lin, Che Kai a Fu, Jeffrey S a Chang, Liann Be a Lin, Ray Ming a Hsueh, Kuang Po b

a CHANG GUNG UNIVERSITY (Taiwan)

b VANUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER HIGH TEMPERATURE; ALGAN; ALGAN/GAN; ANNEALING TEMPERATURES; CAPACITANCE-VOLTAGE CURVE; CRYSTALLINE STRUCTURE; DEVICE RELIABILITY; DIELECTRIC CONSTANTS; GAN HEMTS; GATE INSULATOR; GATE-LEAKAGE CURRENT; HIGH-K MATERIALS; HIGH-POWER OPERATION; HYSTERESIS DISPERSIONS; HYSTERESIS VOLTAGE; INSULATOR LAYER; LANTHANUM OXIDE; METAL GATE; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; ORDER OF MAGNITUDE; POLYNOMIAL CURVE; POST DEPOSITION ANNEALING; PULSED-MODE OPERATION; SCALING DOWN; THERMAL STABILITY;

ANNEALING; BINDING ENERGY; CURVE FITTING; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HYSTERESIS; LANTHANUM; LANTHANUM OXIDES; LEAKAGE CURRENTS; METAL ANALYSIS; POLYNOMIAL APPROXIMATION; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 73849143549 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3264622 Document Type: Article

Times cited : (40)

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