Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

Journal of Physical Chemistry C

Volumn 117, Issue 35, 2013, Pages 18031-18042

  Gleason Rohrer, David C ^a   Brunschwig, Bruce S ^a   Lewis, Nathan S ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADVENTITIOUS CARBON; CHARGED SURFACE STATE; FUNCTIONALIZED; NEGATIVELY CHARGED; SEMI-CONDUCTOR SURFACES; SURFACE DIPOLE; SURFACE PHOTOVOLTAGES; SURFACE TERMINATION;

BINDING ENERGY; CHEMICAL BONDS; ELECTRONEGATIVITY; FERMI LEVEL; PHOTOELECTRONS; SILICON; SURFACE CHEMISTRY; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CORE LEVELS;

EID: 84883682578     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp401585s     Document Type: Article

References (48)

1. Sze, S. M. Physics of Semiconductor Devices; Wiley: New York, 1981.
2. Cowley, A. M.; Sze, S. M. Surface States and Barrier Height of Metal-Semiconductor Systems J. Appl. Phys. 1965, 36 (10) 3212-3220
3. Zhang, Z.; Yates, J. T., Jr. Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces Chem. Rev. 2012, 112 (10) 5520-51
4. Bardeen, J. Surface States and Rectification at a Metal Semi-Conductor Contact Phys. Rev. 1947, 71 (10) 717-727
5. Bocarsly, A. B.; Bookbinder, D. C.; Dominey, R. N.; Lewis, N. S.; Wrighton, M. S. Photo-Reduction at Illuminated P-Type Semiconducting Silicon Photoelectrodes-Evidence for Fermi Level Pinning J. Am. Chem. Soc. 1980, 102 (11) 3683-3688
6. Bard, A. J.; Bocarsly, A. B.; Fan, F. R. F.; Walton, E. G.; Wrighton, M. S. The Concept of Fermi Level Pinning at Semiconductor-Liquid Junctions-Consequences for Energy-Conversion Efficiency and Selection of Useful Solution Redox Couples in Solar Devices J. Am. Chem. Soc. 1980, 102 (11) 3671-3677
7. Lewerenz, H. J. Surface-States and Fermi-Level Pinning at Semiconductor Electrolyte Junctions J. Electroanal. Chem. 1993, 356 (1-2) 121-143
8. Dominey, R. N.; Lewis, N. S.; Bruce, J. A.; Bookbinder, D. C.; Wrighton, M. S. Improvement of Photo-Electrochemical Hydrogen Generation by Surface Modification of P-Type Silicon Semiconductor Photo-Cathodes J. Am. Chem. Soc. 1982, 104 (2) 467-482
9. Sharma, J.; Staley, R. H.; Rimstidt, J. D.; Fair, J. D.; Gora, T. F. Effect of Doping on the X-Ray Photoelectron Spectra of Semiconductors Chem. Phys. Lett. 1971, 9 (6) 564-567
10. Eberhardt, W.; Kalkoffen, G.; Kunz, C.; Aspnes, D.; Cardona, M. Photoemission Studies of 2p Core Levels of Pure and Heavily Doped Silicon Phys. Status Solidi B 1978, 88 (1) 135-143
11. 2(110) J. Phys. Chem. Lett. 2010, 1 (14) 2185-2188
12. Kronik, L.; Shapira, Y. Surface Photovoltage Phenomena: Theory, Experiment, and Applications Surf. Sci. Rep. 1999, 37 (1-5) 1-206
13. Powell, C. J.; Jablonski, A. Evaluation of Calculated and Measured Electron Inelastic Mean Free Paths near Solid Surfaces J. Phys. Chem. Ref. Data 1999, 28 (1) 19-62
14. Hochella, M. F.; Carim, A. H. A Reassessment of Electron-Escape Depths in Silicon and Thermally Grown Silicon Dioxide Thin-Films Surf. Sci. 1988, 197 (3) L260-L268
15. Klasson, M.; Berndtss, A.; Hedman, J.; Nilsson, R.; Nyholm, R.; Nordling, C. Electron Escape Depth in Silicon J. Electron Spectrosc. Relat. Phenom. 1974, 3 (6) 427-434
16. Schlaf, R.; Hinogami, R.; Fujitani, M.; Yae, S.; Nakato, Y. Fermi Level Pinning on Hf Etched Silicon Surfaces Investigated by Photoelectron Spectroscopy J. Vac. Sci. Technol., A 1999, 17 (1) 164-169
17. Cohen, R.; Zenou, N.; Cahen, D.; Yitzchaik, S. Molecular Electronic Tuning of Si Surfaces Chem. Phys. Lett. 1997, 279 (5-6) 270-274
18. Sezen, H.; Suzer, S. Dynamical XPS Measurements for Probing Photoinduced Voltage Changes Surf. Sci. 2010, 604 (21-22) L59-L62
19. Ekiz, O. O.; Mizrak, K.; Dana, A. Chemically Specific Dynamic Characterization of Photovoltaic and Photoconductivity Effects of Surface Nanostructures ACS Nano 2010, 4 (4) 1851-1860
20. 2 Films by Using the X-Ray Photoelectron Spectroscopy Time-Dependent Measurements Appl. Phys. Lett. 2000, 77 (25) 4175-4177
21. Himpsel, F. J.; Hollinger, G.; Pollak, R. A. Determination of the Fermi-Level Pinning Position at Si(111) Surfaces Phys. Rev. B 1983, 28 (12) 7014-7018
22. Hagimoto, Y.; Fujita, T.; Ono, K.; Fujioka, H.; Oshima, M.; Hirose, K.; Tajima, M. Characterization of Carrier-Trapping Phenomena in Ultrathin Chemical Oxides Using X-Ray Photoelectron Spectroscopy Time-Dependent Measurements Appl. Phys. Lett. 1999, 74 (14) 2011-2013
23. 2/Hfsixoy/Si Interfaces Appl. Surf. Sci. 2007, 253 (7) 3508-3511
24. Weiler, U.; Mayer, T.; Jaegermann, W.; Kelting, C.; Schlettwein, D.; Makarov, S.; Wohrle, D. Electronic Energy Levels of Organic Dyes on Silicon: A Photoelectron Spectroscopy Study of Znpc, F16znpc, and Zntpp on P-Si(111):H J. Phys. Chem. B 2004, 108 (50) 19398-19403
25. Hunger, R.; Jaegermann, W.; Merson, A.; Shapira, Y.; Pettenkofer, C.; Rappich, J. Electronic Structure of Methoxy-, Bromo-, and Nitrobenzene Grafted onto Si(111) J. Phys. Chem. B 2006, 110 (31) 15432-15441
26. He, T.; Ding, H.; Peor, N.; Lu, M.; Corley, D. A.; Chen, B.; Ofir, Y.; Gao, Y.; Yitzchaik, S.; Tour, J. M. Silicon/Molecule Interfacial Electronic Modifications J. Am. Chem. Soc. 2008, 130 (5) 1699-1710
27. He, T.; He, J.; Lu, M.; Chen, B.; Pang, H.; Reus, W. F.; Nolte, W. M.; Nackashi, D. P.; Franzon, P. D.; Tour, J. M. Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers J. Am. Chem. Soc. 2006, 128 (45) 14537-14541
28. 8I Cluster Cores Monolayers on Modified N-and P-Type Si(111) Surfaces: Effect of Coverage on Electronic Properties J. Phys. Chem. C 2010, 114 (43) 18622-18633
29. Papaefthimiou, V.; Kennou, S. Electronic Properties of a Semiconducting Oligomer/Silicon (111) Interface: Influence of Silicon Doping. Appl. Phys. Lett. 2005, 86 (22).
30. Hunger, R.; Fritsche, R.; Jaeckel, B.; Jaegermann, W.; Webb, L. J.; Lewis, N. S. Chemical and Electronic Characterization of Methyl-Terminated Si(111) Surfaces by High-Resolution Synchrotron Photoelectron Spectroscopy. Phys. Rev. B 2005, 72 (4).
31. 5- Functionalized Si(111) Surfaces J. Phys. Chem. C 2007, 111 (49) 18204-18213
32. Hacker, C. A. Modifying Electronic Properties at the Silicon-Molecule Interface Using Atomic Tethers Solid-State Electron. 2010, 54 (12) 1657-1664
33. Buriak, J. M. Organometallic Chemistry on Silicon and Germanium Surfaces Chem. Rev. 2002, 102 (5) 1271-1308
34. Watanabe, D.; En, A.; Nakamura, S.; Suhara, M.; Okumura, T. Anomalously Large Band-Bending for Hf-Treated P-Si Surfaces Appl. Surf. Sci. 2003, 216 (1-4) 24-29
35. Miyazaki, S.; Schafer, J.; Ristein, J.; Ley, L. Implication of Hydrogen-Induced Boron Passivation in Wet-Chemically Cleaned Si(111):H Appl. Surf. Sci. 1997, 117, 32-36
36. Campbell, I. H.; Crone, B. K. Energy Level Alignments and Photocurrents in Crystalline Si/Organic Semiconductor Heterojunction Diodes. J. Appl. Phys. 2009, 106 (11).
37. Cooper, A. J.; Keyvanfar, K.; Deberardinis, A.; Pu, L.; Bean, J. C. Dopant Passivation and Work Function Tuning through Attachment of Heterogeneous Organic Monolayers on Silicon in Ultrahigh Vacuum Appl. Surf. Sci. 2011, 257 (14) 6138-6144
38. Sieval, A. B.; Huisman, C. L.; Schonecker, A.; Schuurmans, F. M.; van der Heide, A. S. H.; Goossens, A.; Sinke, W. C.; Zuilhof, H.; Sudholter, E. J. R. Silicon Surface Passivation by Organic Monolayers: Minority Charge Carrier Lifetime Measurements and Kelvin Probe Investigations J. Phys. Chem. B 2003, 107 (28) 6846-6852
39. Bansal, A.; Li, X. L.; Lauermann, I.; Lewis, N. S.; Yi, S. I.; Weinberg, W. H. Alkylation of Si Surfaces Using a Two-Step Halogenation Grignard Route J. Am. Chem. Soc. 1996, 118 (30) 7225-7226
40. Bansal, A.; Li, X. L.; Yi, S. I.; Weinberg, W. H.; Lewis, N. S. Spectroscopic Studies of the Modification of Crystalline Si(111) Surfaces with Covalently-Attached Alkyl Chains Using a Chlorination/Alkylation Method J. Phys. Chem. B 2001, 105 (42) 10266-10277
41. Royea, W. J.; Juang, A.; Lewis, N. S. Preparation of Air-Stable, Low Recombination Velocity Si(111) Surfaces through Alkyl Termination Appl. Phys. Lett. 2000, 77 (13) 1988-1990
42. Yu, H. B.; Webb, L. J.; Ries, R. S.; Solares, S. D.; Goddard, W. A.; Heath, J. R.; Lewis, N. S. Low-Temperature STM Images of Methyl-Terminated Si(111) Surfaces J. Phys. Chem. B 2005, 109 (2) 671-674
43. Eves, B. J.; Lopinski, G. P. Formation and Reactivity of High Quality Halogen Terminated Si(111) Surfaces Surf. Sci. 2005, 579 (2-3) L89-L96
44. Fairley, N. Casaxps Manual 2.3.15: Spectroscopy; Casa Software Limited: Teignmouth, U.K., 2009.
45. Schlaff, R. Calibration of Photoemission Spectra and Work Function Determination. http://rsl.eng.usf.edu/Documents/Tutorials/PEScalibration.pdf (accessed May 10, 2013).
46. Dubey, G.; Rosei, F.; Lopinski, G. P. Modulation of Flat-Band Voltage on H-Terminated Silicon-on-Insulator Pseudo-Metal-Oxide-Semiconductor Field Effect Transistors by Adsorption and Reaction Events. J. Appl. Phys. 2011, 109 (10).
47. Shockley, W.; Queisser, H. J.; Hooper, W. W. Charges on Oxidized Silicon Surfaces Phys. Rev. Lett. 1963, 11 (11) 489.
48. Schlegel, E. S.; Schnable, G. L.; Schwarz, R. F.; Spratt, J. P. Behavior of Surface Ions on Semiconductor Devices IEEE Trans. Electron Devices 1968, ED15 (12) 973.