Modulation of flat-band voltage on H-terminated silicon-on-insulator pseudo-metal-oxide-semiconductor field effect transistors by adsorption and reaction events

Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

  Dubey, Girjesh ^a,b   Rosei, Federico ^b,c   Lopinski, Gregory P ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b INRS EMT   (Canada)

^c MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; ACCUMULATION THRESHOLD; ADSORPTION AND REACTIONS; ALKYL MONOLAYERS; AMBIENT ATMOSPHERE; AMBIENT CONDITIONS; FIELD-EFFECT MOBILITIES; FLAT-BAND VOLTAGE; GAS-PHASE REACTIONS; H-TERMINATED SURFACE; HIGH VACUUM; IN-FIELD; MOLECULAR ADSORPTION; N-CHANNEL DEVICES; REVERSIBLE CHANGE; SENSING APPLICATIONS; SILICON ON INSULATOR;

ADSORPTION; FIELD EFFECT TRANSISTORS; MONOLAYERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE; WATER VAPOR;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79958865065     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3583559     Document Type: Conference Paper

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