Structural, optical, and electrical properties of Hf-doped ZnO films deposited by atomic layer deposition

Surface and Coatings Technology

Volumn 232, Issue , 2013, Pages 41-45

  Geng, Yang ^a   Xie, Zhang Yi ^a   Yang, Wen ^a   Xu, Sai Sheng ^a   Sun, Qing Qing ^a   Ding, Shi Jin ^a   Lu, Hong Liang ^a   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

ALD; Hf doped ZnO; TCO

Indexed keywords

ALD; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOLUMINESCENCE MEASUREMENTS; PREFERENTIAL ORIENTATION; TCO; X RAY PHOTOELECTRON SPECTRA; X-RAY DIFFRACTION SPECTRUM; ZNO;

ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC PROPERTIES; HAFNIUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84883466033     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2013.04.050     Document Type: Article

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