In situ analysis of dopant incorporation, activation, and film growth during thin film ZnO ZnO:Al Atomic layer deposition

Journal of Physical Chemistry C

Volumn 114, Issue 1, 2010, Pages 383-388

  Na, Jeong Seok ^a   Scarel, Giovanna ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-DOPED ZNO; CHEMICAL PROCESS; DOPANT ATOM DISTRIBUTIONS; DOPANT ATOMS; DOPANT INCORPORATION; ELECTRICAL CONDUCTANCE; FILM GROWTH MECHANISM; IN-SITU; IN-SITU ANALYSIS; IN-SITU CHARACTERIZATION; LOW TEMPERATURES; NONUNIFORM; PROTON EXCHANGE; REACTION SCHEMES; SURFACE ADSORPTION; TRIMETHYLALUMINUM; VAPOR PHASE; ZNO;

ACTIVATION ANALYSIS; ADSORPTION; ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; CHARGE TRANSFER; DEPOSITION; DOPING (ADDITIVES); ION EXCHANGE; MONOLAYERS; SURFACE POTENTIAL; SURFACE PROPERTIES; SURFACE REACTIONS; VAPOR DEPOSITION; ZINC OXIDE;

FILM GROWTH;

EID: 75149185428     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp908332q     Document Type: Article

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