Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Choi, Hyun Sik ^a   Jeon, Sanghun ^a   Kim, Hojung ^a   Shin, Jaikwang ^a   Kim, Changjung ^a   Chung, U In ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; BULK PROPERTIES; INTERFACE PROPERTY; INTERFACE QUALITY; INTERFACE STATE; INTERFACE TRAP DENSITY; LOW-FREQUENCY NOISE; RELIABILITY CHARACTERISTICS; STATE DENSITIES; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE SHIFTS;

AMORPHOUS FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; SILICON NITRIDE; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

HAFNIUM;

EID: 80855128058     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658460     Document Type: Article

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