Influences of substrate and annealing on the structural and optical properties and photoluminescence of nanocrystalline ZnO films prepared by plasma assisted pulsed laser deposition

Journal of Physical Chemistry C

Volumn 113, Issue 44, 2009, Pages 19139-19144

  Gao, K ^a   Zhang, W ^a   Sun, J ^a   Xu, N ^a   Ying, Z F ^a   Li, Q ^a   Gan, J ^a   Wu, J D ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS QUARTZ; ANNEALING PROCESS; DIFFERENT SUBSTRATES; DIRECT BAND GAP; LIGHT EXCITATION; LOW TEMPERATURES; NANO-CRYSTALLINE STRUCTURES; NANOCRYSTALLINE ZNO; NANOCRYSTALLINES; OPTICAL CHARACTERIZATION; PLASMA-ASSISTED PULSED LASER DEPOSITION; POST DEPOSITION ANNEALING; SINGLE CRYSTALLINE SILICON; SINGLE-CRYSTALLINE; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURE AND PROPERTIES; ULTRAVIOLET ABSORPTION; UV PHOTOLUMINESCENCE; WURTZITES; ZNO; ZNO THIN FILM;

AMORPHOUS SILICON; ANNEALING; CORUNDUM; CRYSTALLINE MATERIALS; DEPOSITION; FILM PREPARATION; INFRARED SPECTROSCOPY; LIGHT; METALLIC COMPOUNDS; METALLIC FILMS; NANOCRYSTALLINE SILICON; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE FILMS; OXIDE MINERALS; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PULSED LASER DEPOSITION; QUARTZ; RAMAN SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THIN FILMS; ZINC; ZINC OXIDE; ZINC SULFIDE;

AMORPHOUS FILMS;

EID: 70449580897     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp908616e     Document Type: Article

References (37)

1. Mitsuyu, T.; Ono, S.; Wasa, K. J. Appl. Phys. 1980, 51, 2464-2470.
2. Fortunato, E. M. C.; Barquinha, P. M. C.; Pimentel, A. C. M. B. G.; Gonçalves, A. M. F.; Marques, A. J. S.; Pereira, L. M. N.; Martins, R. F. P. Adv. Mater. 2005, 17, 590-594.
3. Benetti, M.; Cannatá, D.; Pietrantonio, F. D.; Verona, E.; Verardi, P.; Scarisoreanu, N.; Matei, D.; Dinescu, G.; Moldovan, A.; Dinescu, M. Superlattices Microst. 2006, 39, 366-375.
4. Devi, G. S.; Subrahmanyam, V. B.; Gadkari, S. C.; Gupta, S. K. Anal. Chim. Acta 2006, 568, 41-46.
5. Lukas, S.-M.; Judith, L. M.-D. Mater. Today 2007, 10, 40-48.
6. Valle, Y.; Li, F. D.; Simonnet, M.; Yamada, I.; Delaunay, J.-J. Nanotechnology 2009, 20, 045501.
7. Liu, C.; Zapien, J. A.; Yao, Y.; Meng, X.; Lee, C. S.; Fan, S.; Lifshitz, Y.; Lee, S. T. Adv. Mater. 2003, 15, 838-841.
8. Look, D. C.; Claffin, B.; Alivov, Ya I.; Park, S. J. Phys. Status Solidi A 2004, 201, 2203-2212.
9. Tang, Z. K.; Wong, G. K. L.; Yu, P.; Kawasaki, M.; Ohtomo, A.; Koinuma, H.; Segawa, Y. Appl. Phys. Lett. 1998, 72, 3270-3272.
10. Huang, M. H.; Mao, S.; Feick, H.; Yan, H.; Wu, Y.; Kind, H.; Weber, E.; Russo, R.; Yang, P. Science 2001, 292, 1897-1899.
11. For example Pearton, S. J.; Norton, D. P.; Ip, K.; Heo, Y. W.; Steiner, T. Superlattices Microst. 2003, 34, 3-32.
12. Park, D. J.; Lee, J. Y.; Park, T. E.; Kim, Y. Y.; Cho, H. K. Thin Solid Films 2007, 515, 721-6725.
13. Dhananjay; Nagaraju, J.; Krupanidhi, S. B. Mater. Sci. Eng., B 2007, 137, 126-13.
14. Zerdali, M.; Hamzaoui, S.; Teherani, F. H.; Rogers, D. Mater. Lett. 2006, 60, 504-508.
15. Mthukumar, S.; Gorla, C. R.; Emametoglu, V. W.; Liang, S.; Lu, Y. J. Cryst. Growth 2001, 225, 197-201.
16. Yadav, B. S.; Singh, S.; Ganguli, T.; Kumar, R.; Majo, S. S.; Srinivasa, R. S. Thin Solid Films 2008, 517, 488-493.
17. Black, K.; Jonesa, A. C.; Chalker, P. R.; Gaskell, J. M.; Murray, R. T.; Joyce, T. B.; Rushworth, S. A. J. Cryst. Growth 2008, 310, 1010-1014.
18. Ohgaki, T.; Ohashi, N.; Haneda, H.; Yasumori, A. J. Cryst. Growth 2006, 292, 33-39.
19. Wang, R. P.; Muto, H.; Yamada, Y.; Kusumori, T. Thin Solid Films 2002, 411, 69-75.
20. Grekhov, I. V.; Liniichuk, I. A.; Titkov, I. E. Tech. Phys. Lett. 2006, 32, 197-198.
21. Shi, W. S.; Agyeman, O.; Xu, C. N. J. Appl. Phys. 2002, 91, 5640-5644.
22. Caglar, Y.; Ilican, S.; Caglar, M.; Yakuphanoglu, F.; Wu, J.; Gao, K.; Luc, P.; Xue, D. J. Alloys Compd. 2009, 481, 885-889.
23. Bacaksiz, E.; Yilmaz, S.; Parlak, M.; Varilci, A.; Altunbas, M. J. Alloys Compd. 2009, 478, 367-370.
24. González, A.; Herrera-Zaldívar, M.; Valenzuela, J.; Escobedo-Morales, A.; Pal, U. Superlattices Microst. 2009, 45, 421-428.
25. Shao, J.; Shen, Y. Q.; Sun, J.; Xu, N.; Yu, D.; Lu, Y. F.; Wu, J. D. J. Vac. Sci. Technol. B 2008, 26, 214-218.
26. Calleja, J. M.; Cardona, M. Phys. Rev. B 1977, 16, 3753-3761.
27. Atanas, J. P.; Asmar, R. Al; Khoury, A.; Foucaran, A. Sens. Actuators A 2006, 127, 49-55.
28. Jang, M. S.; Ryu, M. K.; Yoon, M. H.; Lee, S. H.; Kim, H. K.; Onodera, A.; Kojima, S. Curr. Appl. Phys. 2009, 9, 651-657.
29. Cao, B.; Cai, W.; Zeng, H.; Duan, G. J. Appl. Phys. 2006, 99, 073516.
30. Scoot, J. F. Phys. Rev. B 1970, 2, 1209-1211.
31. Bundesmann, C.; Ashkenov, N.; Schubert, M.; Spemann, D.; Butz, T.; Kaidashev, E. M.; Lorenz, M.; Grundmann, M. Appl, Phys. Lett. 2003, 83, 1974-1976.
32. Kaschner, A.; Haboeck, U.; Strassburg, M.; Kaczmarczyk, G.; Hoffmann, A.; Thomsen, C.; Zeuner, A.; Alves, H. R.; Hofmann, D. M.; Meyer, B. K. Appl, Phys. Lett. 2002, 80, 1909-1911.
33. Draou, K.; Bellakhal, N.; Cheron, B. G.; Brisset, J. L. Mater. Chem. Phys. 1997, 51, 142-146.
34. Fujimura, N.; Nishahara, T.; Goto, S.; Xu, J.; Ito, T. J. Cryst. Growth 1993, 130, 269-279.
35. Pandey, R. K.; Sahu, S. N.; Chandra, S. Handbook of Semiconductor Electrodeposition; Marcel Dekker, Inc.: New York, 1996; p 142.
36. J. Ko, H.; Chen, Y. F.; Zhu, Z.; Yao, T.; Kobayashi, I.; Uchiki, H. Appl. Phys. Lett. 2000, 76, 1905-1907.
37. Vanheusden, K.; Warren, W. L.; Seager, C. H.; Tallant, D. K.; Voigt, J. A.; Gnade, B. E. J. Appl. Phys. 1996, 79, 7983-7990.