A comparative study of electronic and structural properties of polycrystalline and epitaxial magnetron-sputtered ZnO:Al and Zn 1-xMgxO:Al Films - Origin of the grain barrier traps

Journal of Applied Physics

Volumn 114, Issue 6, 2013, Pages

  Bikowski, André ^a   Ellmer, Klaus ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC DEFECTS; ELECTRONIC AND STRUCTURAL PROPERTIES; ELECTRONIC TRANSPORT; ELECTRONIC TRANSPORT PROPERTIES; GRAIN-BOUNDARY DEFECTS; SINGLE CRYSTALLINE SUBSTRATES; SUBSTRATE TEMPERATURE; TRANSMITTANCE MEASUREMENTS;

DEFECTS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; METALLIC FILMS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 84883339948     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817376     Document Type: Article

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