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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3682-3688

Electric properties of zinc oxide epitaxial films grown by ion-beam sputtering with oxygen-radical irradiation

(4) Tsurumi, Takaaki a Nishizawa, Shuichi a Ohashi, Naoki a Ohgaki, Takeshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; EPITAXIAL GROWTH; FILM GROWTH; GRAIN BOUNDARIES; HALL EFFECT; IRRADIATION; MATHEMATICAL MODELS; SEMICONDUCTING ZINC COMPOUNDS; SPUTTERING; THIN FILMS; ZINC OXIDE;

ION-BEAM SPUTTERING; OXYGEN-RADICAL IRRADIATIONS; ZINC OXIDE EPITAXIAL FILMS;

SEMICONDUCTING FILMS;

EID: 0032679469 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.3682 Document Type: Article

Times cited : (69)

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