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Volumn 518, Issue 16, 2010, Pages 4623-4629

Homoepitaxial MgxZn1 - XO (0 ≤ x ≤ 0.22) thin films grown by pulsed laser deposition

(7) Lorenz, Michael a Brandt, Matthias a Lange, Martin a Benndorf, Gabriele a Von Wenckstern, Holger a Klimm, Detlef b Grundmann, Marius a

a UNIVERSITY OF LEIPZIG (Germany)

b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

Hall effect; High resolution X ray diffraction; Homoepitaxy; MgZnO thin films; Photoluminescence; Pulsed laser deposition

Indexed keywords

BLUE SHIFT; EXCITONIC PEAK; FREE ELECTRON CONCENTRATION; HIGH ELECTRON MOBILITY; HIGH RESOLUTION X RAY DIFFRACTION; HOMOEPITAXIAL; HOMOEPITAXY; LOW TEMPERATURE PHOTOLUMINESCENCE; MELT-GROWN; MG CONTENT; MGO CONTENT; MGZNO THIN FILM; MOSAICITY; ORDERS OF MAGNITUDE; OUT-OF-PLANE; PULSED LASER; RECIPROCAL SPACE MAPS; ROCKING CURVES; STRUCTURAL DEVELOPMENT; TEMPLATE FILMS; XRD; ZNO; ZNO SINGLE CRYSTALS;

CARRIER CONCENTRATION; DEPOSITION; DIFFRACTION; ELECTRON MOBILITY; GYRATORS; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

PULSED LASERS;

EID: 77955598956 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.12.046 Document Type: Conference Paper

Times cited : (14)

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