Humid environment stability of low pressure chemical vapor deposited boron doped zinc oxide used as transparent electrodes in thin film silicon solar cells

Thin Solid Films

Volumn 520, Issue 1, 2011, Pages 558-562

  Steinhauser, Jérôme ^a   Meyer, Stefan ^a   Schwab, Marlène ^a   Faÿ, Sylvie ^a   Ballif, Christophe ^a   Kroll, U ^b   Borrello, D ^b  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b Oerlikon Solar Lab SA   (Switzerland)

Author keywords

Solar cells; Transparent conducting oxide; Zinc oxide

Indexed keywords

BORON-DOPED; CHEMICAL VAPOR DEPOSITED; DAMP-HEAT EXPOSURE; ELECTRICAL AND OPTICAL PROPERTIES; GRAIN BOUNDARY SCATTERING; HEAVILY DOPED; HUMID ENVIRONMENT; LOW PRESSURES; POTENTIAL BARRIERS; SCATTERING MECHANISMS; THIN-FILM SILICON SOLAR CELLS; TRANSPARENT CONDUCTING OXIDE; TRANSPARENT CONDUCTIVE OXIDES; TRANSPARENT ELECTRODE; ZNO;

BORON; CHEMICAL STABILITY; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OPTICAL PROPERTIES; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; THIN FILMS; VAPORS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 80054030417     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.06.095     Document Type: Article

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