Growth mechanism of ZnO low-temperature homoepitaxy

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Park, S H ^a,d   Minegishi, T ^a   Lee, H J ^a   Oh, D C ^b   Ko, H J ^c   Chang, J H ^a,e   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Hoseo University   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e Korea Maritime University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION SCATTERING; DONOR-BOUND EXCITON; EMISSION LINEWIDTH; GROWTH MECHANISMS; HIGH QUALITY; HIGH TEMPERATURE; HOMOEPITAXY; LOW TEMPERATURES; MATERIAL PROPERTY; OUT-DIFFUSION; WETTING LAYER; X RAY ROCKING CURVE; ZNO; ZNO FILMS; ZNO SUBSTRATE; ZNO SURFACE;

ELECTRON MOBILITY; EPITAXIAL GROWTH; EXCITONS; IMPURITIES; METALLIC FILMS; POINT DEFECTS; SURFACE DEFECTS; SURFACE ROUGHNESS;

ZINC OXIDE;

EID: 80052959739     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3630030     Document Type: Conference Paper

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