SCOPUS 정보 검색 플랫폼

Volumn 3, Issue 9, 2010, Pages

Residual doping in homoepitaxial zinc oxide layers grown by metal organic vapor phase epitaxy

(9) Bisotto, Isabelle a Granier, Carole a Brochen, Stephane a Ribeaud, Alexandre a Ferret, Pierre a Chicot, Gauthier a Rothman, Johan a Pernot, Julien b Feuillet, Guy a

a CEA LETI (France)

b LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION CHANNEL; HALL MEASUREMENTS; HETEROEPITAXIAL LAYERS; HOMOEPITAXIAL; HYDROGEN IMPURITY; MAXIMUM ENTROPY; METAL-ORGANIC VAPOR PHASE EPITAXY; MOBILITY SPECTRUM ANALYSIS; OXIDE LAYER; RESIDUAL DOPING;

CARRIER CONCENTRATION; EPILAYERS; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; ORGANOMETALLICS; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS; TRANSPORT PROPERTIES; VAPORS; ZINC; ZINC OXIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77956747759 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.095802 Document Type: Article

Times cited : (5)

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