Temperature dependence of electrical properties of Ga-doped ZnO films deposited by ion plating with DC arc discharge

Thin Solid Films

Volumn 528, Issue , 2013, Pages 19-25

  Terasako, T ^a   Song, H ^b   Makino, H ^b   Shirakata, S ^a   Yamamoto, T ^b  

^a EHIME UNIVERSITY   (Japan)

^b KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Carrier transport; Grain boundary scattering; Hall mobility; Ion plating; Ionized impurity scattering; Phonon scattering; Polycrystalline Ga doped ZnO films

Indexed keywords

CARRIER ELECTRONS; CONTINUOUS TRANSFORMATIONS; DC ARC DISCHARGE; DEPLETION LAYER; GA-DOPED ZNO; GRAIN BOUNDARY SCATTERING; HALL EFFECT MEASUREMENT; ION PLATING; IONIZED IMPURITY SCATTERING; MEAN FREE PATH; PHONON-SCATTERING MECHANISMS; POTENTIAL BARRIERS; SCATTERING MECHANISMS; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; CARRIER TRANSPORT; DEPOSITS; ELECTRIC PROPERTIES; GALLIUM; GRAIN BOUNDARIES; HALL MOBILITY; IONIZATION; METALLIC FILMS; PHONON SCATTERING; ZINC OXIDE;

ION IMPLANTATION;

EID: 84872921223     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.07.140     Document Type: Conference Paper

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