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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 1, 2005, Pages 183-186

Epitaxial growth of aluminium-doped zinc oxide films by magnetron sputtering on (001), (110), and (012) oriented sapphire substrates

(4) Kuppusami, P a Vollweiler, G b Rafaja, D c Ellmer, K a

a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

b HAHN MEITNER INSTITUT (Germany)

c TU BERGAKADEMIE FREIBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DOPING (ADDITIVES); EPITAXIAL GROWTH; HALL EFFECT; LATTICE CONSTANTS; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

POLYCRYSTALLINE FILMS; SAPPHIRE SUBSTRATES; ZINC OXIDE FILMS;

ZINC OXIDE;

EID: 10844293642 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2485-x Document Type: Article

Times cited : (28)

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