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Japanese Journal of Applied Physics

Volumn 48, Issue 12, 2009, Pages

Polycrystalline silicon thin-film flash memory with Pi-gate structure and Hfo2 charge trapping layer

(6) Chen, Lun Jyun a Wu, Yung Chun a Chiang, Ji Hong a Hung, Min Feng a Chang, Chin Wei a Su, Po Wen a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOSS; CONVENTIONAL MEMORIES; FLASH NONVOLATILE MEMORY; GATE CONTROL; GATE STRUCTURE; GOOD DATA; POLY-CRYSTALLINE SILICON; POLYCRYSTALLINE SILICON (POLY-SI); PROGRAM/ERASE; SINGLE-CHANNEL;

ELECTRON MOBILITY; FLASH MEMORY; HAFNIUM COMPOUNDS; NANOWIRES; POLYSILICON; THIN FILM DEVICES;

CHARGE TRAPPING;

EID: 75149187833 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.120215 Document Type: Article

Times cited : (6)

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