High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3

Applied Physics Letters

Volumn 88, Issue 4, 2006, Pages 1-3

  Ding, Shi Jin ^a   Zhang, Min ^a   Chen, Wei ^a   Zhang, David Wei ^a   Wang, Li Kang ^a   Wang, X P ^b   Zhu, Chunxiang ^b   Li, Ming Fu ^b  

^a FUDAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CAPACITANCE; CAPACITORS; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONS; HAFNIUM COMPOUNDS; PERMITTIVITY; SILICA;

CAPACITANCE DENSITY; ERASE SATURATION;

MIS DEVICES;

EID: 31544434017     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168227     Document Type: Article

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