Impact of the interfaces in the charge trap layer on the storage characteristics of ZrO2/Al2O3 nanolaminate-based charge trap flash memory cells

Materials Letters

Volumn 92, Issue , 2013, Pages 21-24

  Tang, Zhenjie ^a   Zhu, Xinhua ^a   Xu, Hanni ^a   Xia, Yidong ^a   Yin, Jiang ^a   Liu, Zhiguo ^a   Li, Aidong ^a   Yan, Feng ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Charge trapping; Dielectrics; Interfaces; Memory cells; Nanolaminate

Indexed keywords

BLOCKING LAYERS; CELL STRUCTURE; CHARGE STORAGE CHARACTERISTIC; CHARGE TRAP; CHARGE TRAP FLASH MEMORIES; DEEP QUANTUM WELL; ELECTROSTATIC REPULSION; MEMORY CELL; MEMORY WINDOW; NANOLAMINATE; STORAGE CHARACTERISTIC; TRAPPED ELECTRONS;

ALUMINUM; DIELECTRIC MATERIALS; FLASH MEMORY; INTERFACES (MATERIALS); OPTIMIZATION; SEMICONDUCTOR STORAGE; ZIRCONIUM ALLOYS;

CHARGE TRAPPING;

EID: 84871370766     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2012.10.024     Document Type: Article

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