SONOS-type flash memory using an HfO2as a charge trapping layer deposited by the sol-gel spin-coating method

IEEE Electron Device Letters

Volumn 27, Issue 8, 2006, Pages 653-655

  You, Hsin Chiang ^a   Hsu, Tze Hsiang ^a   Ko, Fu Hsiang ^a   Huang, Jiang Wen ^a   Yang, Wen Luh ^b   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Charge retention; Endurance; HfO2; Silicon oxide nitride oxide silicon (SONOS) like memory; So gel spin coating

Indexed keywords

ANNEALING; HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SOL-GELS; SPIN COATING; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE RETENTION; HAFNIUM OXIDE; SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS)-LIKE MEMORY; SOL-GEL SPIN COATING;

FLASH MEMORY;

EID: 33746550356     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.879026     Document Type: Article

References (11)

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