SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 14, 2010, Pages

A TiAl2 O5 nanocrystal charge trap memory device

(10) Zhou, Yue a Yin, Jiang a Xu, Hanni a Xia, Yidong a Liu, Zhiguo a Li, Aidong a Gong, Youpin a Pu, Lin a Yan, Feng a Shi, Yi a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; CHARGE TRAP; CHARGE TRAPPING MEMORIES; ELECTRON DENSITIES; ELECTRON ENERGY LOSS SPECTRUM; MEMORY DEVICE; MEMORY WINDOW; NON-VOLATILE MEMORY APPLICATION; RETENTION CHARACTERISTICS; VALENCE BAND OFFSETS;

AMORPHOUS FILMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; NANOCRYSTALS; PHASE SEPARATION; TITANIUM ALLOYS; TITANIUM COMPOUNDS;

CHARGE TRAPPING;

EID: 77958024079 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3496437 Document Type: Article

Times cited : (39)

References (14)

1
- 14844282876
- Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoate
- DOI 10.1002/adma.200401048
- Q. D. Ling, Y. Song, S. J. Ding, C. X. Zhu, D. S. H. Chan, D. L. Kwong, E. T. Kang, and K. G. Neoh, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 17, 455 (2005). 10.1002/adma.200401048 (Pubitemid 40338661)
- (2005) Advanced Materials , vol.17 , Issue.4 , pp. 455-459
- Ling, Q.¹ Song, Y.² Ding, S.J.³ Zhu, C.⁴ Chan, D.S.H.⁵ Kwong, D.-L.⁶ Kang, E.-T.⁷ Neoh, K.-G.⁸

2
- 36449008130
- A silicon nanocrystals based memory
- DOI 10.1063/1.116085, PII S0003695196003105
- S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. APPLAB 0003-6951 68, 1377 (1996). 10.1063/1.116085 (Pubitemid 126688256)
- (1996) Applied Physics Letters , vol.68 , Issue.10 , pp. 1377-1379
- Tiwari, S.¹ Rana, F.² Hanafi, H.³ Hartstein, A.⁴ Crabbe, E.F.⁵ Chan, K.⁶

3
- 75749121931
- APPLAB 0003-6951,. 10.1063/1.3293291
- G. H. Park and W. J. Cho, Appl. Phys. Lett. APPLAB 0003-6951 96, 043503 (2010). 10.1063/1.3293291
- (2010) Appl. Phys. Lett. , vol.96 , pp. 043503
- Park, G.H.¹ Cho, W.J.²

4
- 3042822401
- APPLAB 0003-6951,. 10.1063/1.1757022
- T. H. Ng, W. K. Chim, W. K. Choi, V. Ho, L. W. Teo, A. Y. Du, and C. H. Tung, Appl. Phys. Lett. APPLAB 0003-6951 84, 4385 (2004). 10.1063/1.1757022
- (2004) Appl. Phys. Lett. , vol.84 , pp. 4385
- Ng, T.H.¹ Chim, W.K.² Choi, W.K.³ Ho, V.⁴ Teo, L.W.⁵ Du, A.Y.⁶ Tung, C.H.⁷

5
- 4344661847
- IETDAI 0018-9383,. 10.1109/TED.2004.829861
- Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi, IEEE Trans. Electron Devices IETDAI 0018-9383 51, 1143 (2004). 10.1109/TED.2004.829861
- (2004) IEEE Trans. Electron Devices , vol.51 , pp. 1143
- Tan, Y.N.¹ Chim, W.K.² Cho, B.J.³ Choi, W.K.⁴

6
- 41149145759
- DTPTEW 0743-1562.
- C. H. Lai, A. Chin, H. L. Kao, K. M. Chen, M. Hong, J. Kwo, and C. C. Chi, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2006, 44.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2006 , pp. 44
- Lai, C.H.¹ Chin, A.² Kao, H.L.³ Chen, K.M.⁴ Hong, M.⁵ Kwo, J.⁶ Chi, C.C.⁷

7
- 33645733710
- IETDAI 0018-9383,. 10.1109/TED.2006.870273
- Y. N. Tan, W. K. Chim, W. K. Choi, M. S. Joo, and B. J. Cho, IEEE Trans. Electron Devices IETDAI 0018-9383 53, 654 (2006). 10.1109/TED.2006.870273
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 654
- Tan, Y.N.¹ Chim, W.K.² Choi, W.K.³ Joo, M.S.⁴ Cho, B.J.⁵

8
- 34248577655
- Fluorine effects on the dipole structures of the Al2 O3 thin films and characterization by spectroscopic ellipsometry
- DOI 10.1063/1.2730581
- C. S. Lai, K. M. Fan, H. K. Peng, S. J. Lin, C. Y. Lee, and C. F. Ai, Appl. Phys. Lett. APPLAB 0003-6951 90, 172904 (2007). 10.1063/1.2730581 (Pubitemid 46748375)
- (2007) Applied Physics Letters , vol.90 , Issue.17 , pp. 172904
- Lai, C.S.¹ Fan, K.M.² Peng, H.K.³ Lin, S.J.⁴ Lee, C.Y.⁵ Ai, C.F.⁶

9
- 41649086320
- Electrical hysteresis of the Ti0.25 Al0.75 Ox dielectric films after high-temperature treatment
- DOI 10.1063/1.2906364
- L. Shi, Y. D. Xia, K. B. Yin, and Z. G. Liu, Appl. Phys. Lett. APPLAB 0003-6951 92, 132912 (2008). 10.1063/1.2906364 (Pubitemid 351483673)
- (2008) Applied Physics Letters , vol.92 , Issue.13 , pp. 132912
- Shi, L.¹ Xia, Y.² Yin, K.³ Liu, Z.⁴

10
- 33646198048
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.44.1620
- E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. PRLTAO 0031-9007 44, 1620 (1980). 10.1103/PhysRevLett.44.1620
- (1980) Phys. Rev. Lett. , vol.44 , pp. 1620
- Kraut, E.A.¹ Grant, R.W.² Waldrop, J.R.³ Kowalczyk, S.P.⁴

11
- 0001094129
- APPLAB 0003-6951,. 10.1063/1.1310209
- S. A. Chambers, Y. Liang, Z. Y. R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett. APPLAB 0003-6951 77, 1662 (2000). 10.1063/1.1310209
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1662
- Chambers, S.A.¹ Liang, Y.² Droopad, Z.Y.R.³ Ramdani, J.⁴ Eisenbeiser, K.⁵

12
- 0035519201
- Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics
- DOI 10.1116/1.1418405, 45th International COnference on Electron, Ion, and Photon Beam Technology and Nanofabrication
- S. Miyazaki, J. Vac. Sci. Technol. B JVTBD9 1071-1023 19, 2212 (2001). 10.1116/1.1418405 (Pubitemid 34089722)
- (2001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.19 , Issue.6 , pp. 2212-2216
- Miyazaki, S.¹

13
- 0033728046
- SSELA5 0038-1101,. 10.1016/S0038-1101(00)00012-5
- Y. Yang and M. H. White, Solid-State Electron. SSELA5 0038-1101 44, 949 (2000). 10.1016/S0038-1101(00)00012-5
- (2000) Solid-State Electron. , vol.44 , pp. 949
- Yang, Y.¹ White, M.H.²

14
- 0141761571
- DTPTEW 0743-1562.
- T. Sugizaki, M. Kobayashi, M. Ishido, M. Minakata, M. Yamaguchi, Y. Sugiyama, T. Nakanishi, and H. Tanaka, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2003, 27.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2003 , pp. 27
- Sugizaki, T.¹ Kobayashi, M.² Ishido, M.³ Minakata, M.⁴ Yamaguchi, M.⁵ Sugiyama, Y.⁶ Nakanishi, T.⁷ Tanaka, H.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.