Deposition by radio frequency magnetron sputtering of GaV4S 8 thin films for resistive random access memory application

Thin Solid Films

Volumn 533, Issue , 2013, Pages 54-60

  Souchier, E ^a   Besland, M P ^a   Tranchant, J ^a   Corraze, B ^a   Moreau, P ^a   Retoux, R ^b   Estournes C ^c   Mazoyer, P ^d   Cario, L ^a   Janod, E ^a  

^a UNIVERSITÉ DE NANTES   (France)

^b LABORATOIRE CRISMAT   (France)

^c INSTITUT CARNOT CIRIMAT   (France)

^d STMICROELECTRONICS   (France)

Author keywords

GaV4S8; Polycrystalline layer; RF magnetron sputtering; Rietveld refinement; Sulfur material; Thin layer; XRD

Indexed keywords

GAV4S8; POLYCRYSTALLINE LAYERS; RF-MAGNETRON SPUTTERING; THIN LAYERS; XRD;

AMORPHOUS MATERIALS; CHEMICAL ANALYSIS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; RIETVELD REFINEMENT; SPARK PLASMA SINTERING; SULFUR; THIN FILMS; X RAY DIFFRACTION;

DEPOSITION;

EID: 84879887256     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.11.051     Document Type: Conference Paper

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