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Volumn 43, Issue 3, 2008, Pages 309-313

Thickness and substrate effects on AlN thin film growth at room temperature

(9) Abdallah, B a,b Duquenne, C a Besland, P a Gautron, E a Jouan, Y a Tessier, Y a Brault, J c Cordier, Y c Djouadi, A a

a INSTITUT DES MATÉRIAUX JEAN ROUXEL (France)

b DEPARTMENT OF MOLECULAR BIOLOGY AND BIOTECHNOLOGY (Syrian Arab Republic)

c CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL LAYERS; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIQUID PHASE EPITAXY; MAGNETIC FILMS; MAGNETRON SPUTTERING; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; PHASE INTERFACES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; FILM-THICKNESS; ROOM TEMPERATURES;

SUBSTRATES;

EID: 50849140217 PISSN: 12860042 EISSN: 12860050 Source Type: Journal
DOI: 10.1051/epjap:2008082 Document Type: Conference Paper

Times cited : (42)

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