A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 396-398

  Tran, X A ^a   Yu, H Y ^a   Yeo, Y C ^b   Wu, L ^a   Liu, W J ^a   Wang, Z R ^a   Fang, Z ^a   Pey, K L ^a   Sun, X W ^a   Du, A Y ^c   Nguyen, B Y ^d   Li, M F ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e FUDAN UNIVERSITY   (China)

Author keywords

HfOx; resistive random access memory (RRAM); unipolar resistive switching (RS)

Indexed keywords

CROSSBAR ARCHITECTURE; HFOX; MEMORY PERFORMANCE; PROGRAMMING SPEED; PULSE SWITCHING; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RETENTION CHARACTERISTICS; SI SUBSTRATES; UNIPOLAR DEVICES; UNIPOLAR RESISTIVE SWITCHING (RS);

FLASH MEMORY; HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79951951303     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2099205     Document Type: Article

References (16)

1. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007. (Pubitemid 350064191)
2. A. Sawa, "Resistive switching in transition metal oxide," Mater. Today, vol. 11, no. 6, pp. 28-36, Jun. 2008. (Pubitemid 351680723)
3. D. Lee, D. J. Seong, H. J. Choi, I. Jo, R. Dong, W. Xiang, S. Oh, M. Pyun, S. O. Seo, S. Heo, M. Jo, D. K. Hwang, H. K. Park, M. Chang, M. Hasan, and H. Hwang, "Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications," in IEDM Tech. Dig., 2006, pp. 797-800.
4. H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM," in IEDM Tech. Dig., 2008, pp. 297-300.
5. C. Kügeler, M. Meier, R. Rosezin, S. Gilles, and R. Waser, "High density 3D memory architecture based on the resistive switching effect," Solid State Electron., vol. 53, no. 12, pp. 1287-1292, Dec. 2009.
6. Q. Zuo, S. Long, Q. Liu, S. Zhang, Q. Wang, Y. Li, Y. Wang, and M. Liu, "Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory," J. Appl. Phys., vol. 106, no. 7, p. 073 724, Oct. 2009.
7. M.-J. Lee, S. Seo, D.-C. Kim, S.-E. Ahn, D. H. Seo, I.-K. Yoo, I.-G. Baek, D.-S. Kim, I.-S. Byun, S.-H. Kim, I.-R. Hwang, J.-S. Kim, S.-H. Jeon, and B. H. Park, "A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories," Adv. Mater., vol. 19, no. 1, pp. 73-76, Jan. 2007. (Pubitemid 46144812)
8. M.-J. Lee, Y. Park, B.-S. Kang, S.-E. Ahn, C. B. Lee, K. H. Kim, W. X. Xianyu, G. Stefanovich, J.-H. Lee, S.-J. Chung, Y.-H. Kim, C.-S. Lee, J.-B. Park, I. G. Baek, and I. K. Yoo, "2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM application," in IEDM Tech. Dig., Dec. 2007, pp. 771-774.
9. D. S. Golubovi, A. H. Miranda, N. Akil, R. T. F. van Schaijk, and M. J. van Duuren, "Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories," Microelectron. Eng., vol. 84, no. 12, pp. 2921-2926, Dec. 2007. (Pubitemid 350116286)
10. J. H. Oh, J. H. Park, Y. S. Lim, H. S. Lim, Y. T. Oh, J. S. Kim, J. M. Shin, Y. J. Song, K. C. Ryoo, D. W. Lim, S. S. Park, J. I. Kim, J. H. Kim, J. Yu, F. Yeung, C. W. Jeong, J. H. Kong, D. H. Kang, G. H. Koh, G. T. Jeong, H. S. Jeong, and K. Kim, "Full integration of highly manufacturable 512 Mb PRAM based on 90 nm technology," in IEDM Tech. Dig., 2006, pp. 49-52.
11. Y. Sasago, M. Kinoshita, T. Morikawa, K. Kurotsuchi, S. Hanzawa, T. Mine, A. Shima, Y. Fujisaki, H. Kume, H. Moriya, N. Takaura, and K. Torii, "Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode," in VLSI Symp. Tech. Dig., 2009, pp. 24-25.
12. S. Lee, W. G. Kim, S. W. Rhee, and K. Yong, "Resistance switching behaviors of hafnium oxide films grown by MOCVD for nonvolatile memory applications," J. Electrochem. Soc., vol. 155, no. 2, pp. H92-H96, Dec. 2007.
13. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline. Oxford, U.K.: Clarendon, 1979.
14. B. Gao, B. Sun, H. W. Zhang, L. F. Liu, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, "Unified physical model of bipolar oxide-based resistive switching memory," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1326-1328, Dec. 2009.
15. B. Lee and H.-S. P. Wong, "NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path," in VLSI Symp. Tech. Dig., 2009, pp. 28-29.
16. L. Goux, L. G. Lisoni, M. Jurczak, D. J. Wouters, L. Courtade, and C. Muller, "Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers," J. Appl. Phys., vol. 107, no. 2, p. 024512, Jan. 2010.