Preparation of transparent p-type (La1-xSrxO)CuS thin films by r.f. sputtering technique

Thin Solid Films

Volumn 411, Issue 1, 2002, Pages 125-128

  Hiramatsu, Hidenori ^a   Ueda, Kazushige ^b   Ohta, Hiromichi ^a   Orita, Masahiro ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Layered oxysulfide; p Type semiconductor; Wide gap

Indexed keywords

ANNEALING; COMPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; LANTHANUM COMPOUNDS; LIGHT TRANSMISSION; POSITIVE IONS; SILICA; SPECTROSCOPIC ANALYSIS; SPUTTERING; TRANSPARENCY;

OPTICAL TRANSMISSION SPECTROSCOPY;

THIN FILMS;

EID: 0037157431     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00200-6     Document Type: Conference Paper

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