First evidence of resistive switching in polycrystalline GaV4S8 thin layers

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 2, 2011, Pages 53-55

  Souchier, Emeline ^a   Cario, Laurent ^a   Corraze, Benoit ^a   Moreau, Philippe ^a   Mazoyer, Pascale ^b   Estournès, Claude ^c   Retoux, Richard ^d   Janod, Etienne ^a   Besland, Marie Paule ^a  

^a UNIVERSITÉ DE NANTES   (France)

^b STMICROELECTRONICS   (France)

^c INSTITUT CARNOT CIRIMAT   (France)

^d LABORATOIRE CRISMAT   (France)

Author keywords

GaVS; Magnetron sputtering; Resistive switching; Thin films

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; MAGNETRON SPUTTERING; MOTT INSULATORS; SINGLE CRYSTALS; SWITCHING; THIN FILMS; X RAY DIFFRACTION;

ELECTRICAL MEASUREMENT; GAVS; MEMORY WINDOW; NON-VOLATILE; POLYCRYSTALLINE; RESISTIVE SWITCHING; RF-MAGNETRON SPUTTERING; TEM ANALYSIS;

GALLIUM COMPOUNDS;

EID: 79251579287     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004392     Document Type: Letter

References (21)

1. R. Waser and M. Aono, Nature Mater. 6, 833 (2007).
2. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).
3. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
4. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nature Mater. 5, 312 (2006).
5. D. C. Kim et al., Appl. Phys. Lett. 88, 202102 (2006).
6. L. Goux, J. G. Lisoni, M. Jurczak, D. J. Wouters, L. Courtade, and Ch. Muller, J. Appl. Phys. 107, 024512 (2010).
7. C. Vaju, L. Cario, B. Corraze, E. Janod, V. Dubost, T. Cren, D. Roditchev, D. Braithwaite, and O. Chauvet, Adv. Mater. 20, 2760 (2008).
8. V. Dubost, T. Cren, C. Vaju, L. Cario, B. Corraze, E. Janod, F. Debontridder, and D. Roditchev, Adv. Funct. Mater. 19, 2800 (2009).
9. C. Vaju, L. Cario, B. Corraze, E. Janod, V. Dubost, T. Cren, D. Roditchev, D. Braithwaite, and O. Chauvet, Microelectron. Eng. 85, 2430 (2008).
10. L. Cario, C. Vaju, B. Corraze, V. Guiot, and E. Janod, Adv. Mater. 22(45), 5193 (2010).
11. L. Cario, B. Corraze, E. Janod, C. Vaju, and M. P. Besland, PCT Int. Appl. PCT/EP2008/052968 (2008).
12. C. Elissalde, M. Maglione, and C. Estournes, J. Am. Ceram. Soc. 90, 973 (2007); and PNF2 CNRS National Platform.
13. M. P. Besland, H. Djani-Ait Aissa, P. R. J. Barroy, S. Lafane, P. Y. Tessier, B. Angleraud, M. Richard-Plouet, L. Brohan, and M. A. Djouadi, Thin Solid Films 495, 86 (2006).
14. M. P. Besland, C. Borderon, S. Le Tacon, M. Cavellier, M. Richard-Plouet, D. Albertini, D. Averty, P. Y. Tessier, H. W. Gundel, L. Brohan, and M. A. Djouadi, Integrated Ferroelectrics 94, 94 (2007).
15. E. Souchier, L. Cario, B. Corraze, P. Moreau, E. Janod, and M.-P. Besland, to be published.
16. P. Stadelmann, Ultramicroscopy 21, 131 (1987). P. Stadelmann.
17. International Technology Roadmap for Semiconductors, Emerging Research Devices (2007)
18. J. S. Modera et al., Phys. Rev. Lett. 74, 3273 (1995). N. Nishimura et al., J. Appl. Phys. 91, 5246 (2002).
19. Y. Huai et al., J. J. Appl. Phys. 45, 3835 (2006). Y. Huai, AAPPS Bulletin 18, 33 (2008). S. Mangin et al., AAPPS Bulletin 18, 41 (2008).
20. C. Chapert et al., Nature Mater. 6, 813 (2007).
21. E. Souchier, M.-P. Besland, B. Corraze, L. Cario, E. Janod, and J. Martial, French patent, 09/51744, March 2009.