Effect of program/erase speed on switching uniformity in filament-type RRAM

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 958-960

  Shin, Jungho ^a   Park, Jubong ^a   Lee, Joonmyoung ^a   Park, Sangsu ^a   Kim, Seonghyun ^a   Lee, Wootae ^a   Kim, Insung ^a   Lee, Daeseok ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

RRAM; switching speed; switching uniformity

Indexed keywords

EFFECTIVE ANALYSIS; FAST SWITCHING; GOOD DATA; ON/OFF RATIO; PROGRAM/ERASE; PULSE OPERATION; RRAM; SWITCHING OPERATIONS; SWITCHING SPEED;

PLATINUM; RANDOM ACCESS STORAGE;

SWITCHING;

EID: 79959787162     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2147274     Document Type: Article

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