Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements

Nanotechnology

Volumn 24, Issue 30, 2013, Pages

  Kim, Seongmin ^a   Kim, Hwansoo ^b   Janes, David B ^a   Ju, Sanghyun ^b  

^a PURDUE UNIVERSITY   (United States)

^b Kyonggi University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; ELECTRICAL CHARACTERISTIC; INTERFACE CHARACTERISTIC; INTERFACE TRAP DENSITY; INTERFACE TRAP STATE; LOW-FREQUENCY NOISE MEASUREMENTS; NANOWIRE TRANSISTORS; SURFACE-TO-VOLUME RATIO;

CHEMICAL VAPOR DEPOSITION; FABRICATION; FLOW RATE; NANOWIRES; PHOTOELECTRONS; PLASMA APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE STATES;

EID: 84879728670     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/30/305201     Document Type: Article

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