Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors

ACS Nano

Volumn 6, Issue 8, 2012, Pages 7352-7361

  Kim, Seongmin ^a   Carpenter, Patrick D ^a   Jean, Rand K ^a   Chen, Haitian ^b   Zhou, Chongwu ^b   Ju, Sanghyun ^c   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

^b University of Southern California   (United States)

^c Kyonggi University   (South Korea)

Author keywords

flicker noise; indium oxide; nanowires; octadecanethiol; transistor

Indexed keywords

1-OCTADECANETHIOL; BAND GAP ENERGY; DEBYE LENGTH; DEVICE PERFORMANCE; DEVICE SIMULATIONS; ELECTRICAL CHARACTERIZATION; ELECTRICAL TRANSPORT PROPERTIES; FIXED CHARGE DENSITY; FLICKER NOISE; HIGH MOBILITY; INDIUM OXIDE; INTERFACE TRAP DENSITY; LOW FREQUENCY; LOW NOISE; LOW POWER; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE MEASUREMENTS; NANOWIRE TRANSISTORS; NOISE AMPLITUDE; NOISE MEASUREMENTS; OCTADECANETHIOL; OPTIMIZATION TECHNOLOGY; POSITIVE SHIFT; RECTANGULAR GEOMETRY; SEMICONDUCTOR NANOWIRE; SUBTHRESHOLD; SUBTHRESHOLD SLOPE; SURFACE PASSIVATION; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

ACOUSTIC NOISE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; NANOWIRES; PASSIVATION; PHOTOELECTRONS; SELF ASSEMBLED MONOLAYERS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

TRANSISTORS;

NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; SEMICONDUCTOR; SIGNAL NOISE RATIO; ULTRASTRUCTURE;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MODELS, CHEMICAL; NANOSTRUCTURES; SIGNAL-TO-NOISE RATIO; TRANSISTORS, ELECTRONIC;

EID: 84865601885     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn302484c     Document Type: Article

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